Arama Sonuçları - Seo, Jung-Hun

1T DRAM 4H-SiC AlGaN/GaN AlGaN/GaN HEMT DIBL effect GaN GaN high electron mobility transistor (HEMT) I–V kink effect Ku-band MESFET T-anode T1-995 TA1-2040 TCAD TK1-9971 W band ammonothermal GaN amorphous InGaZnO (a-IGZO) amplitude balance analytical model annealing temperature anode field plate (AFP) asymmetric power combining breakdown voltage (BV) buffer layer cathode field plate (CFP) channel length modulation characteristic length distributed Bragg reflector edge termination