Skip to content
Welcome to University of UNSW, Bengaluru
Home
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Māori
Sign In
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Channels
Nanowire Field-Effect Transistor (FET)
Search for more channels:
Similar Items: Nanowire Field-Effect Transistor (FET)
Channel Options
View Record
Explore related channels
Quick Look
Quantum Transport in Mesoscopic Systems
Quick Look
Miniaturized Transistors
Quick Look
Electron-Phonon Interactions in Low-Dimensional Structures
Quick Look
Silicon-Based Nanomaterials: Technology and Applications
Quick Look
Many Body Quantum Chaos
Quick Look
Miniaturized Transistors, Volume II
Quick Look
Fluctuation Relations and Nonequilibrium Thermodynamics in Classical and Quantum Systems
Quick Look
Quantum Mechanics
Quick Look
Silicon Nanodevices
Quick Look
Silica and Silicon Based Nanostructures
Quick Look
Field-Effect Sensors
Quick Look
Quantum Chromodynamic
Quick Look
IEEE Journal of the Electron Devices Society
Quick Look
Nanoelectronic Materials, Devices and Modeling
Quick Look
Nonequilibrium Phenomena in Strongly Correlated Systems
Quick Look
Dynamics of Open Quantum Systems
Quick Look
Symmetries of Nonlinear PDEs on Metric Graphs and Branched Networks
Quick Look
Organic Semiconductors
Quick Look
Statistical Mechanics and Thermodynamics of Liquids and Crystals
Quick Look
Advanced Nanocomposites for Photonics and Optoelectronics and Mechanics
Quick Look
Superconducting and Graphene-based Devices
Quick Look
Oscillators
Quick Look
Quantum Nonlocality
Quick Look
Wide Bandgap Based Devices
Load more items
Topic: random dopant
Add more channels like this
Toggle additional channel list for Topic: random dopant
Topic: variability
Topic: device simulation
Topic: nanodevice
Topic: screening
Topic: Coulomb interaction
Topic: III-V
Topic: TASE
Topic: MOSFETs
Topic: Integration
Topic: nanowire field-effect transistors
Topic: silicon nanomaterials
Topic: charge transport
Topic: one-dimensional multi-subband scattering models
Topic: Kubo–Greenwood formalism
Topic: schrödinger-poisson solvers
Topic: DC and AC characteristic fluctuations
Topic: gate-all-around
Topic: nanowire
Topic: work function fluctuation
Topic: aspect ratio of channel cross-section
Topic: timing fluctuation
Topic: noise margin fluctuation
Topic: power fluctuation
Topic: CMOS circuit
Topic: statistical device simulation
Topic: variability effects
Topic: Monte Carlo
Topic: Schrödinger based quantum corrections
Topic: quantum modeling
Topic: nonequilibrium Green’s function
Topic: nanowire transistor
Topic: electron–phonon interaction
Topic: phonon–phonon interaction
Topic: self-consistent Born approximation
Topic: lowest order approximation
Topic: Padé approximants
Topic: Richardson extrapolation
Topic: ZnO
Topic: field effect transistor
Topic: conduction mechanism
Topic: metal gate
Topic: material properties
Topic: fabrication
Topic: modelling
Topic: nanojunction
Topic: constriction
Topic: quantum electron transport
Topic: quantum confinement
Topic: dimensionality reduction
Topic: stochastic Schrödinger equations
Topic: geometric correlations
Topic: silicon nanowires
Topic: nano-transistors
Topic: quantum transport
Topic: hot electrons
Topic: self-cooling
Topic: nano-cooling
Topic: thermoelectricity
Topic: heat equation
Topic: non-equilibrium Green functions
Topic: power dissipation
Topic: thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: g...
Channel Options
Show items as search results
Explore related channels
Quick Look
Nanowire Field-Effect Transistor (FET)
Load more items
Topic: drift-diffusion
Add more channels like this
Toggle additional channel list for Topic: drift-diffusion
Topic: variability
Topic: device simulation
Topic: nanodevice
Topic: screening
Topic: Coulomb interaction
Topic: III-V
Topic: TASE
Topic: MOSFETs
Topic: Integration
Topic: nanowire field-effect transistors
Topic: silicon nanomaterials
Topic: charge transport
Topic: one-dimensional multi-subband scattering models
Topic: Kubo–Greenwood formalism
Topic: schrödinger-poisson solvers
Topic: DC and AC characteristic fluctuations
Topic: gate-all-around
Topic: nanowire
Topic: work function fluctuation
Topic: aspect ratio of channel cross-section
Topic: timing fluctuation
Topic: noise margin fluctuation
Topic: power fluctuation
Topic: CMOS circuit
Topic: statistical device simulation
Topic: variability effects
Topic: Monte Carlo
Topic: Schrödinger based quantum corrections
Topic: quantum modeling
Topic: nonequilibrium Green’s function
Topic: nanowire transistor
Topic: electron–phonon interaction
Topic: phonon–phonon interaction
Topic: self-consistent Born approximation
Topic: lowest order approximation
Topic: Padé approximants
Topic: Richardson extrapolation
Topic: ZnO
Topic: field effect transistor
Topic: conduction mechanism
Topic: metal gate
Topic: material properties
Topic: fabrication
Topic: modelling
Topic: nanojunction
Topic: constriction
Topic: quantum electron transport
Topic: quantum confinement
Topic: dimensionality reduction
Topic: stochastic Schrödinger equations
Topic: geometric correlations
Topic: silicon nanowires
Topic: nano-transistors
Topic: quantum transport
Topic: hot electrons
Topic: self-cooling
Topic: nano-cooling
Topic: thermoelectricity
Topic: heat equation
Topic: non-equilibrium Green functions
Topic: power dissipation
Topic: thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: g...
Channel Options
Show items as search results
Explore related channels
Quick Look
Nanowire Field-Effect Transistor (FET)
Load more items
View Record
Prev
Explore related channels
Next
