Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors

This essential collection, edited by Dr. Zeheng Wang and Dr. Jing-Kai Huang, unveils the latest advancements in semiconductor technology that are considered to be the cornerstone of the modern digital era. Spanning cutting-edge research in semiconductor materials, devices, and systems, this reprint...

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collection Directory of Open Access Books
description This essential collection, edited by Dr. Zeheng Wang and Dr. Jing-Kai Huang, unveils the latest advancements in semiconductor technology that are considered to be the cornerstone of the modern digital era. Spanning cutting-edge research in semiconductor materials, devices, and systems, this reprint is an indispensable guide through the innovative realms of microelectronics and nanotechnology.Dive into expert discussions on device architectures, from high-electron-mobility transistors to innovative designs resistant to extreme conditions. Explore the frontiers of material science and fabrication techniques, witnessing groundbreaking methods that enhance device performance and reliability. Uncover the evolving landscape of energy efficiency and power management, crucial for next-generation telecommunications and electric vehicles. Lastly, immerse yourself in the dynamic world of optoelectronics, where advancements in light-based technologies are redefining possibilities.Bringing together pioneering research papers, this volume is not just an academic resource but a beacon for industry professionals and scholars alike, pointing the way to the future of semiconductor technology.
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institution Directory of Open Access Books
language eng
publishDate 2023
publishDateRange 2023
publishDateSort 2023
publisher MDPI - Multidisciplinary Digital Publishing Institute
publisherStr MDPI - Multidisciplinary Digital Publishing Institute
record_format ojs
spelling doab-20.500.12854ir-1288592024-04-11T15:10:46Z Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors Wang, Zeheng Huang, Jingkai derating DC–DC converter eGaN PoL conductive polymer tantalum chip capacitor reliability MTBF quartz flexible accelerometer electric field coupling noise lock-in amplifier circuit AlGaN/GaN high-electron-mobility transistor passivation HfO2 power clamp circuit ESD HBM false trigger bulk electron accumulation (BEA) extended superjunction trench gate extended drain (ED) BV and Ron,sp fluorides diamond ultrashort-pulse laser direct laser inscription photoluminescent microbits vacancy clusters Micro-LED metasurface light extraction efficiency angular deflection polarization a-IGZO magnetron sputtering thin-film transistors oxygen vacancy oxygen flow rate band-to-band tunneling (BTBT) linear energy transfer value (LET) single-particle irradiation effect anti-irradiation optimization GaN high electron mobility transistors nanochannel tri-gate dual-gate n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities This essential collection, edited by Dr. Zeheng Wang and Dr. Jing-Kai Huang, unveils the latest advancements in semiconductor technology that are considered to be the cornerstone of the modern digital era. Spanning cutting-edge research in semiconductor materials, devices, and systems, this reprint is an indispensable guide through the innovative realms of microelectronics and nanotechnology.Dive into expert discussions on device architectures, from high-electron-mobility transistors to innovative designs resistant to extreme conditions. Explore the frontiers of material science and fabrication techniques, witnessing groundbreaking methods that enhance device performance and reliability. Uncover the evolving landscape of energy efficiency and power management, crucial for next-generation telecommunications and electric vehicles. Lastly, immerse yourself in the dynamic world of optoelectronics, where advancements in light-based technologies are redefining possibilities.Bringing together pioneering research papers, this volume is not just an academic resource but a beacon for industry professionals and scholars alike, pointing the way to the future of semiconductor technology. 2023-11-30T21:00:28Z 2023-11-30T21:00:28Z 2023 book ONIX_20231130_9783036595115_311 9783036595115 9783036595108 https://directory.doabooks.org/handle/20.500.12854/128859 eng application/octet-stream Attribution 4.0 International https://mdpi.com/books/pdfview/book/8329 https://mdpi.com/books/pdfview/book/8329 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-0365-9510-8 10.3390/books978-3-0365-9510-8 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783036595115 9783036595108 152 Basel open access
spellingShingle derating
DC–DC converter
eGaN
PoL
conductive polymer tantalum chip capacitor
reliability
MTBF
quartz flexible accelerometer
electric field coupling noise
lock-in amplifier circuit
AlGaN/GaN
high-electron-mobility transistor
passivation
HfO2
power clamp circuit
ESD
HBM
false trigger
bulk electron accumulation (BEA)
extended superjunction trench gate
extended drain (ED)
BV and Ron,sp
fluorides
diamond
ultrashort-pulse laser
direct laser inscription
photoluminescent microbits
vacancy clusters
Micro-LED
metasurface
light extraction efficiency
angular deflection
polarization
a-IGZO
magnetron sputtering
thin-film transistors
oxygen vacancy
oxygen flow rate
band-to-band tunneling (BTBT)
linear energy transfer value (LET)
single-particle irradiation effect
anti-irradiation optimization
GaN
high electron mobility transistors
nanochannel
tri-gate
dual-gate
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities
Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
title Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
title_full Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
title_fullStr Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
title_full_unstemmed Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
title_short Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
title_sort latest advancements in next generation semiconductors materials and devices for wide bandgap and 2d semiconductors
topic derating
DC–DC converter
eGaN
PoL
conductive polymer tantalum chip capacitor
reliability
MTBF
quartz flexible accelerometer
electric field coupling noise
lock-in amplifier circuit
AlGaN/GaN
high-electron-mobility transistor
passivation
HfO2
power clamp circuit
ESD
HBM
false trigger
bulk electron accumulation (BEA)
extended superjunction trench gate
extended drain (ED)
BV and Ron,sp
fluorides
diamond
ultrashort-pulse laser
direct laser inscription
photoluminescent microbits
vacancy clusters
Micro-LED
metasurface
light extraction efficiency
angular deflection
polarization
a-IGZO
magnetron sputtering
thin-film transistors
oxygen vacancy
oxygen flow rate
band-to-band tunneling (BTBT)
linear energy transfer value (LET)
single-particle irradiation effect
anti-irradiation optimization
GaN
high electron mobility transistors
nanochannel
tri-gate
dual-gate
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities
topic_facet derating
DC–DC converter
eGaN
PoL
conductive polymer tantalum chip capacitor
reliability
MTBF
quartz flexible accelerometer
electric field coupling noise
lock-in amplifier circuit
AlGaN/GaN
high-electron-mobility transistor
passivation
HfO2
power clamp circuit
ESD
HBM
false trigger
bulk electron accumulation (BEA)
extended superjunction trench gate
extended drain (ED)
BV and Ron,sp
fluorides
diamond
ultrashort-pulse laser
direct laser inscription
photoluminescent microbits
vacancy clusters
Micro-LED
metasurface
light extraction efficiency
angular deflection
polarization
a-IGZO
magnetron sputtering
thin-film transistors
oxygen vacancy
oxygen flow rate
band-to-band tunneling (BTBT)
linear energy transfer value (LET)
single-particle irradiation effect
anti-irradiation optimization
GaN
high electron mobility transistors
nanochannel
tri-gate
dual-gate
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities
url ONIX_20231130_9783036595115_311