Different Types of Field-Effect Transistors

In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fun...

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Format:	Online
Sprache:	Englisch
Veröffentlicht:	IntechOpen 2023
Schlagworte:	heterojunction, mobility, polarization, infrared, silicon, terahertz thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components
Online-Zugang:	ONIX_20231201_9789535131762_781
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