Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29
The 29th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 29) served as a continuation of the biennial conference that has been held since 1965. ICANS 29 was held from 23 to 26 August at the campus of Nanjing University—a great venue for global academic researchers, in...
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| Språk: | engelska |
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MDPI - Multidisciplinary Digital Publishing Institute
2024
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| Länkar: | ONIX_20240514_9783725801206_219 |
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| description | The 29th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 29) served as a continuation of the biennial conference that has been held since 1965. ICANS 29 was held from 23 to 26 August at the campus of Nanjing University—a great venue for global academic researchers, industrial partners, and policymakers to come together and share their latest progress, breakthroughs, and new ideas on a wide range of topics in the fields of amorphous and nanocrystalline thin films and other nanostructured materials, as well as device applications.It was the first time that this prestigious event was held in China, and it provided the perfect opportunity for young Chinese researchers and students to participate more actively in academic exchange as a part of the conference and become familiarized with the latest developments in the fields in which they work. And despite a one-year delay due to the COVID-19 pandemic, ICANS 29 still attracted more than 300 paper submissions from 11 countries, including both on-site and virtual oral and poster presentations, which made it truly both a global and hybrid conference. |
| format | Online |
| id | doab-20.500.12854ir-137620 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2024 |
| publishDateRange | 2024 |
| publishDateSort | 2024 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1376202024-05-14T13:47:06Z Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 Chen, Kunji Oda, Shunri Yu, Linwei Zn–air batteries 2D MoS2 defects-embedded OER ORR resistive switching memory transient current trap state silicon nanowires confined catalyst formation in-plane solid–liquid–solid growth ZnSnN2 nanocrystalline Schottky diode heterojunction solar cell perovskite solar cells electron transport layer low hysteresis SnO2 TiO2 nonthermal plasma Er-hyperdoped Si QDs efficiency of energy transfer coupling constant strong coupling phase change memory Ge2Sb2Te5 phase transition electron transport artificial synapse memristor brain-inspired computing high speed thermal stability crystallization PCM phase change random access memory C-doped Sb2Te3 density functional theory formation energy continuously adjustable resistance value porous conducting polymer strain sensing dual sensing mode breathable electroluminescence erbium Al2O3 Y2O3 atomic layer deposition chalcogenides glasses As2S3 transition metal doping electronic structure and magnetism density functional theory simulations C–V memory window nanocrystalline Si floating gate memory UVB emission rare-earth orthoborate gadolinium phosphor co-doping Si nanocrystals SiC phosphorous LED OTS material high scalability high on-current density PF model a-SiCxNy:H encapsulation CsPbBr3 QDs stability photoluminescence Si quantum dots core/shell structure CVD two-dimensional material van der Waals heterostructure trilayer the first-principles calculation microsphere arrays nanofiber dielectric layers piezocapacitive sensor flexible pressure sensors electronic skins n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues The 29th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 29) served as a continuation of the biennial conference that has been held since 1965. ICANS 29 was held from 23 to 26 August at the campus of Nanjing University—a great venue for global academic researchers, industrial partners, and policymakers to come together and share their latest progress, breakthroughs, and new ideas on a wide range of topics in the fields of amorphous and nanocrystalline thin films and other nanostructured materials, as well as device applications.It was the first time that this prestigious event was held in China, and it provided the perfect opportunity for young Chinese researchers and students to participate more actively in academic exchange as a part of the conference and become familiarized with the latest developments in the fields in which they work. And despite a one-year delay due to the COVID-19 pandemic, ICANS 29 still attracted more than 300 paper submissions from 11 countries, including both on-site and virtual oral and poster presentations, which made it truly both a global and hybrid conference. 2024-05-14T13:46:56Z 2024-05-14T13:46:56Z 2024 book ONIX_20240514_9783725801206_219 9783725801206 9783725801190 https://directory.doabooks.org/handle/20.500.12854/137620 eng application/octet-stream Attribution-NonCommercial-NoDerivatives 4.0 International https://mdpi.com/books/pdfview/book/8810 https://mdpi.com/books/pdfview/book/8810 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-7258-0119-0 10.3390/books978-3-7258-0119-0 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783725801206 9783725801190 248 open access |
| spellingShingle | Zn–air batteries 2D MoS2 defects-embedded OER ORR resistive switching memory transient current trap state silicon nanowires confined catalyst formation in-plane solid–liquid–solid growth ZnSnN2 nanocrystalline Schottky diode heterojunction solar cell perovskite solar cells electron transport layer low hysteresis SnO2 TiO2 nonthermal plasma Er-hyperdoped Si QDs efficiency of energy transfer coupling constant strong coupling phase change memory Ge2Sb2Te5 phase transition electron transport artificial synapse memristor brain-inspired computing high speed thermal stability crystallization PCM phase change random access memory C-doped Sb2Te3 density functional theory formation energy continuously adjustable resistance value porous conducting polymer strain sensing dual sensing mode breathable electroluminescence erbium Al2O3 Y2O3 atomic layer deposition chalcogenides glasses As2S3 transition metal doping electronic structure and magnetism density functional theory simulations C–V memory window nanocrystalline Si floating gate memory UVB emission rare-earth orthoborate gadolinium phosphor co-doping Si nanocrystals SiC phosphorous LED OTS material high scalability high on-current density PF model a-SiCxNy:H encapsulation CsPbBr3 QDs stability photoluminescence Si quantum dots core/shell structure CVD two-dimensional material van der Waals heterostructure trilayer the first-principles calculation microsphere arrays nanofiber dielectric layers piezocapacitive sensor flexible pressure sensors electronic skins n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 |
| title | Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 |
| title_full | Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 |
| title_fullStr | Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 |
| title_full_unstemmed | Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 |
| title_short | Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 |
| title_sort | amorphous and nanocrystalline semiconductors selected papers from icans 29 |
| topic | Zn–air batteries 2D MoS2 defects-embedded OER ORR resistive switching memory transient current trap state silicon nanowires confined catalyst formation in-plane solid–liquid–solid growth ZnSnN2 nanocrystalline Schottky diode heterojunction solar cell perovskite solar cells electron transport layer low hysteresis SnO2 TiO2 nonthermal plasma Er-hyperdoped Si QDs efficiency of energy transfer coupling constant strong coupling phase change memory Ge2Sb2Te5 phase transition electron transport artificial synapse memristor brain-inspired computing high speed thermal stability crystallization PCM phase change random access memory C-doped Sb2Te3 density functional theory formation energy continuously adjustable resistance value porous conducting polymer strain sensing dual sensing mode breathable electroluminescence erbium Al2O3 Y2O3 atomic layer deposition chalcogenides glasses As2S3 transition metal doping electronic structure and magnetism density functional theory simulations C–V memory window nanocrystalline Si floating gate memory UVB emission rare-earth orthoborate gadolinium phosphor co-doping Si nanocrystals SiC phosphorous LED OTS material high scalability high on-current density PF model a-SiCxNy:H encapsulation CsPbBr3 QDs stability photoluminescence Si quantum dots core/shell structure CVD two-dimensional material van der Waals heterostructure trilayer the first-principles calculation microsphere arrays nanofiber dielectric layers piezocapacitive sensor flexible pressure sensors electronic skins n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues |
| topic_facet | Zn–air batteries 2D MoS2 defects-embedded OER ORR resistive switching memory transient current trap state silicon nanowires confined catalyst formation in-plane solid–liquid–solid growth ZnSnN2 nanocrystalline Schottky diode heterojunction solar cell perovskite solar cells electron transport layer low hysteresis SnO2 TiO2 nonthermal plasma Er-hyperdoped Si QDs efficiency of energy transfer coupling constant strong coupling phase change memory Ge2Sb2Te5 phase transition electron transport artificial synapse memristor brain-inspired computing high speed thermal stability crystallization PCM phase change random access memory C-doped Sb2Te3 density functional theory formation energy continuously adjustable resistance value porous conducting polymer strain sensing dual sensing mode breathable electroluminescence erbium Al2O3 Y2O3 atomic layer deposition chalcogenides glasses As2S3 transition metal doping electronic structure and magnetism density functional theory simulations C–V memory window nanocrystalline Si floating gate memory UVB emission rare-earth orthoborate gadolinium phosphor co-doping Si nanocrystals SiC phosphorous LED OTS material high scalability high on-current density PF model a-SiCxNy:H encapsulation CsPbBr3 QDs stability photoluminescence Si quantum dots core/shell structure CVD two-dimensional material van der Waals heterostructure trilayer the first-principles calculation microsphere arrays nanofiber dielectric layers piezocapacitive sensor flexible pressure sensors electronic skins n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues |
| url | ONIX_20240514_9783725801206_219 |