Radiation Effects of Advanced Electronic Devices and Circuits
As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radi...
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| Format: | Online |
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| Language: | English |
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MDPI - Multidisciplinary Digital Publishing Institute
2024
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| Online Access: | ONIX_20240704_9783725814817_241 |
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| collection | Directory of Open Access Books |
| description | As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radiation sensitivity in advanced devices and integrated circuits. The aim of this reprint is to disclose the basic mechanisms of radiation effects for advanced devices and the breakthrough of new solutions to assess and mitigate radiation sensitivity in advanced devices and integrated circuits. This reprint presents new modeling approaches that predict how radiation impacts electronic devices and circuits. Accurate models are essential for designing devices that can tolerate radiation without significant performance degradation. We also focus on the innovative design and fabrication techniques that enhance the radiation tolerance of integrated circuits. Moreover, some discussions highlight new testing protocols and methodologies that provide more accurate and comprehensive evaluations of radiation hardness, as well as the latest advancements and trends that are of particular interest to researchers and professionals in the radiation effects community. Overall, this issue offers valuable insights into the challenges and opportunities in this rapidly evolving field, highlighting the critical importance of continued innovation and collaboration to address the complex problems posed by radiation in modern electronics. |
| format | Online |
| id | doab-20.500.12854ir-139445 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2024 |
| publishDateRange | 2024 |
| publishDateSort | 2024 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1394452024-07-04T09:56:21Z Radiation Effects of Advanced Electronic Devices and Circuits Chi, Yaqing Cai, Li Cai, Chang single event upset (SEU) total ionizing dose (TID) silicon-on-insulator (SOI) synergistic effect radiation-hardened by design (RHBD) CMOS devices single event latch-up (SEL) single event effect (SEE) resistor pulsed laser SiGe HBT Geant4 TCAD simulation single event transient cryogenic temperature carbon nanotube field effect transistor total ionizing dose radiation effect trapped charge SiGe heterojunction bipolar transistor single event effect charge collection VDMOS variability oxide trapped charges interface traps CMOS image sensor star sensor hot pixel single-event transient star map recognition algorithm spallation neutron thermal neutron Monte Carlo system on chip split-gate-enhanced VDMOSFET planar gate VDMOSFET total ionizing dose effect long-term reliability TID radiation effects camera resolution single event effects transient bright spot single event upset SiC MOSFET heavy-ion irradiation oxide reliability TCAD high-dose-rate transient ionizing effect FDSOI supply voltage Monte-Carlo method radiation shielding space radiation reliability SOI MOSFET radiation HCI single-event effect single-event gate rupture leakage current heavy ion irradiation machine learning soft error rate transient pulse propagation relay protection device fault injection soft error CMOS SPAD proton radiation DCR displacement damage n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBC Engineering: general thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radiation sensitivity in advanced devices and integrated circuits. The aim of this reprint is to disclose the basic mechanisms of radiation effects for advanced devices and the breakthrough of new solutions to assess and mitigate radiation sensitivity in advanced devices and integrated circuits. This reprint presents new modeling approaches that predict how radiation impacts electronic devices and circuits. Accurate models are essential for designing devices that can tolerate radiation without significant performance degradation. We also focus on the innovative design and fabrication techniques that enhance the radiation tolerance of integrated circuits. Moreover, some discussions highlight new testing protocols and methodologies that provide more accurate and comprehensive evaluations of radiation hardness, as well as the latest advancements and trends that are of particular interest to researchers and professionals in the radiation effects community. Overall, this issue offers valuable insights into the challenges and opportunities in this rapidly evolving field, highlighting the critical importance of continued innovation and collaboration to address the complex problems posed by radiation in modern electronics. 2024-07-04T09:56:17Z 2024-07-04T09:56:17Z 2024 book ONIX_20240704_9783725814817_241 9783725814817 9783725814824 https://directory.doabooks.org/handle/20.500.12854/139445 eng application/octet-stream Attribution-NonCommercial-NoDerivatives 4.0 International https://mdpi.com/books/pdfview/book/9448 https://mdpi.com/books/pdfview/book/9448 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-7258-1482-4 10.3390/books978-3-7258-1482-4 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783725814817 9783725814824 252 open access |
| spellingShingle | single event upset (SEU) total ionizing dose (TID) silicon-on-insulator (SOI) synergistic effect radiation-hardened by design (RHBD) CMOS devices single event latch-up (SEL) single event effect (SEE) resistor pulsed laser SiGe HBT Geant4 TCAD simulation single event transient cryogenic temperature carbon nanotube field effect transistor total ionizing dose radiation effect trapped charge SiGe heterojunction bipolar transistor single event effect charge collection VDMOS variability oxide trapped charges interface traps CMOS image sensor star sensor hot pixel single-event transient star map recognition algorithm spallation neutron thermal neutron Monte Carlo system on chip split-gate-enhanced VDMOSFET planar gate VDMOSFET total ionizing dose effect long-term reliability TID radiation effects camera resolution single event effects transient bright spot single event upset SiC MOSFET heavy-ion irradiation oxide reliability TCAD high-dose-rate transient ionizing effect FDSOI supply voltage Monte-Carlo method radiation shielding space radiation reliability SOI MOSFET radiation HCI single-event effect single-event gate rupture leakage current heavy ion irradiation machine learning soft error rate transient pulse propagation relay protection device fault injection soft error CMOS SPAD proton radiation DCR displacement damage n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBC Engineering: general thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering Radiation Effects of Advanced Electronic Devices and Circuits |
| title | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_full | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_fullStr | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_full_unstemmed | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_short | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_sort | radiation effects of advanced electronic devices and circuits |
| topic | single event upset (SEU) total ionizing dose (TID) silicon-on-insulator (SOI) synergistic effect radiation-hardened by design (RHBD) CMOS devices single event latch-up (SEL) single event effect (SEE) resistor pulsed laser SiGe HBT Geant4 TCAD simulation single event transient cryogenic temperature carbon nanotube field effect transistor total ionizing dose radiation effect trapped charge SiGe heterojunction bipolar transistor single event effect charge collection VDMOS variability oxide trapped charges interface traps CMOS image sensor star sensor hot pixel single-event transient star map recognition algorithm spallation neutron thermal neutron Monte Carlo system on chip split-gate-enhanced VDMOSFET planar gate VDMOSFET total ionizing dose effect long-term reliability TID radiation effects camera resolution single event effects transient bright spot single event upset SiC MOSFET heavy-ion irradiation oxide reliability TCAD high-dose-rate transient ionizing effect FDSOI supply voltage Monte-Carlo method radiation shielding space radiation reliability SOI MOSFET radiation HCI single-event effect single-event gate rupture leakage current heavy ion irradiation machine learning soft error rate transient pulse propagation relay protection device fault injection soft error CMOS SPAD proton radiation DCR displacement damage n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBC Engineering: general thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering |
| topic_facet | single event upset (SEU) total ionizing dose (TID) silicon-on-insulator (SOI) synergistic effect radiation-hardened by design (RHBD) CMOS devices single event latch-up (SEL) single event effect (SEE) resistor pulsed laser SiGe HBT Geant4 TCAD simulation single event transient cryogenic temperature carbon nanotube field effect transistor total ionizing dose radiation effect trapped charge SiGe heterojunction bipolar transistor single event effect charge collection VDMOS variability oxide trapped charges interface traps CMOS image sensor star sensor hot pixel single-event transient star map recognition algorithm spallation neutron thermal neutron Monte Carlo system on chip split-gate-enhanced VDMOSFET planar gate VDMOSFET total ionizing dose effect long-term reliability TID radiation effects camera resolution single event effects transient bright spot single event upset SiC MOSFET heavy-ion irradiation oxide reliability TCAD high-dose-rate transient ionizing effect FDSOI supply voltage Monte-Carlo method radiation shielding space radiation reliability SOI MOSFET radiation HCI single-event effect single-event gate rupture leakage current heavy ion irradiation machine learning soft error rate transient pulse propagation relay protection device fault injection soft error CMOS SPAD proton radiation DCR displacement damage n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBC Engineering: general thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering |
| url | ONIX_20240704_9783725814817_241 |