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III-Nitride Materials

Ⅲ-nitride materials possess superior optical and electrical properties due to direct bandgap and polarization effects. Light-emitting devices are already common in daily lighting, traffic signage, landscape lighting, etc. Additionally, they hold promise for next-generation displays, e.g., microLED d...

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Պահպանված է:
Ձևաչափ: Online
Լեզու:անգլերեն
Հրապարակվել է: MDPI - Multidisciplinary Digital Publishing Institute 2025
Խորագրեր:
Ⅲ-nitride materials
Ⅲ-nitride devices
semiconductor
Mechanisms
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
thema EDItEUR::M Medicine and Nursing::MJ Clinical and internal medicine::MJC Diseases and disorders::MJCL Oncology
Առցանց հասանելիություն:ONIX_20250220_9783725821075_116
Ցուցիչներ: Ավելացրեք ցուցիչ
Չկան պիտակներ, Եղեք առաջինը, ով նշում է այս գրառումը!
Ամփոփում:Ⅲ-nitride materials possess superior optical and electrical properties due to direct bandgap and polarization effects. Light-emitting devices are already common in daily lighting, traffic signage, landscape lighting, etc. Additionally, they hold promise for next-generation displays, e.g., microLED displays, as well as field effect transistors (FETs), for example, high electron mobility transistors (HEMTs) and p-channel FETs. The investigation of antipolar (N-polar) epitaxy and devices is also flourishing. The following Special Issue reprint gathers research achievements related to III-nitride materials and their associated devices, covering growth methods, device fabrication technology, structural design, and physical mechanisms of III-nitride semiconductors, devices, etc.

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