Characterization of Inorganic Semiconductors for Solar Energy Conversion and their Stability in Aqueous Media

Gallium nitride (GaN) is a well-established semiconductor in opto-electronic applications. It has a wide band gap of 3.4 eV and is thus excitable in the near-UV range. A promising application of GaN is its use as a photoelectrode driving photocatalytic reactions such as water splitting for generatio...

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Hlavní autor:	Ehrig, Carina
Médium:	Online
Jazyk:	angličtina
Vydáno:	FAU University Press 2025
Témata:	Licht Korrosionsbeständigkeit Galliumnitrid Fotoelektrochemie Magnesiumsilicid thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes
On-line přístup:	ONIX_20251215T160703_9783944057767_38
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