Micro- and Nanotechnology of Wide Bandgap Semiconductors
Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...
保存先:
| フォーマット: | Online |
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| 言語: | 英語 |
| 出版事項: |
MDPI - Multidisciplinary Digital Publishing Institute
2022
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| 主題: | |
| オンライン･アクセス: | ONIX_20220111_9783036515229_937 |
| タグ: |
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