Semiconductor Infrared Devices and Applications

Infrared (IR) technologies—from Herschel’s initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe—have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These in...

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collection Directory of Open Access Books
description Infrared (IR) technologies—from Herschel’s initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe—have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems.
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institution Directory of Open Access Books
language eng
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publisher MDPI - Multidisciplinary Digital Publishing Institute
publisherStr MDPI - Multidisciplinary Digital Publishing Institute
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spelling doab-20.500.12854ir-811002024-04-09T23:15:47Z Semiconductor Infrared Devices and Applications Perera, A. G. Unil microbolometer infrared sensor complementary metal-oxide semiconductor (CMOS) high sensitivity temperature sensor microresonator MEMS clamped–clamped beam thermal detector Infrared detector strained layer superlattice InAs/InAsSb absorption coefficient barrier detector high operating temperature manganite heterostructure photodetector heterostructures split-off band wavelength extension device performance ultrasound transducer photoacoustic imaging piezoelectric micromachined CMUT PMUT optical ultrasound detection type-II superlattice infrared detector mid-wavelength infrared (MWIR) unipolar barrier InAs/GaSb T2SL IR TE-cooled spectroscopy RoHS MCT n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues Infrared (IR) technologies—from Herschel’s initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe—have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems. 2022-05-06T11:27:45Z 2022-05-06T11:27:45Z 2022 book ONIX_20220506_9783036533537_166 9783036533537 9783036533544 https://directory.doabooks.org/handle/20.500.12854/81100 eng image/jpeg Attribution 4.0 International https://mdpi.com/books/pdfview/book/5129 https://mdpi.com/books/pdfview/book/5129 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-0365-3354-4 10.3390/books978-3-0365-3354-4 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783036533537 9783036533544 110 Basel open access
spellingShingle microbolometer
infrared sensor
complementary metal-oxide semiconductor (CMOS)
high sensitivity
temperature sensor
microresonator
MEMS
clamped–clamped beam
thermal detector
Infrared detector
strained layer superlattice
InAs/InAsSb
absorption coefficient
barrier detector
high operating temperature
manganite
heterostructure
photodetector
heterostructures
split-off band
wavelength extension
device performance
ultrasound transducer
photoacoustic imaging
piezoelectric
micromachined
CMUT
PMUT
optical ultrasound detection
type-II superlattice
infrared detector
mid-wavelength infrared (MWIR)
unipolar barrier
InAs/GaSb
T2SL
IR
TE-cooled
spectroscopy
RoHS
MCT
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
Semiconductor Infrared Devices and Applications
title Semiconductor Infrared Devices and Applications
title_full Semiconductor Infrared Devices and Applications
title_fullStr Semiconductor Infrared Devices and Applications
title_full_unstemmed Semiconductor Infrared Devices and Applications
title_short Semiconductor Infrared Devices and Applications
title_sort semiconductor infrared devices and applications
topic microbolometer
infrared sensor
complementary metal-oxide semiconductor (CMOS)
high sensitivity
temperature sensor
microresonator
MEMS
clamped–clamped beam
thermal detector
Infrared detector
strained layer superlattice
InAs/InAsSb
absorption coefficient
barrier detector
high operating temperature
manganite
heterostructure
photodetector
heterostructures
split-off band
wavelength extension
device performance
ultrasound transducer
photoacoustic imaging
piezoelectric
micromachined
CMUT
PMUT
optical ultrasound detection
type-II superlattice
infrared detector
mid-wavelength infrared (MWIR)
unipolar barrier
InAs/GaSb
T2SL
IR
TE-cooled
spectroscopy
RoHS
MCT
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
topic_facet microbolometer
infrared sensor
complementary metal-oxide semiconductor (CMOS)
high sensitivity
temperature sensor
microresonator
MEMS
clamped–clamped beam
thermal detector
Infrared detector
strained layer superlattice
InAs/InAsSb
absorption coefficient
barrier detector
high operating temperature
manganite
heterostructure
photodetector
heterostructures
split-off band
wavelength extension
device performance
ultrasound transducer
photoacoustic imaging
piezoelectric
micromachined
CMUT
PMUT
optical ultrasound detection
type-II superlattice
infrared detector
mid-wavelength infrared (MWIR)
unipolar barrier
InAs/GaSb
T2SL
IR
TE-cooled
spectroscopy
RoHS
MCT
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
url ONIX_20220506_9783036533537_166