Electronic Nanodevices

The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10...

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Bibliografske podrobnosti
Format:	Online
Jezik:	angleščina
Izdano:	MDPI - Multidisciplinary Digital Publishing Institute 2022
Teme:	concentrator systems GaInP/GaInAs/Ge multi-junction photovoltaics solar cells space triple-junction FeFET ferroelectric nonvolatile semiconductor memory SBT nanoantennas optics optoelectronic devices photovoltaic technology rectennas resistive memories thermal model heat equation thermal conductivity circuit simulation compact modeling resistive switching nanodevices power conversion efficiency MXenes electrodes additives HTL/ETL design of experiments GFET graphene high-frequency RF devices tolerance analysis molybdenum oxides green synthesis biological chelator additional capacity anodes lithium-ion batteries carbon nanotube junctionless tunnel field effect transistors chemical doping electrostatic doping NEGF simulation band-to-band tunneling switching performance nanoscale phosphorene black phosphorus nanoribbon edge contact contact resistance quantum transport NEGF metallization broadening zigzag carbon nanotube armchair-edge graphene nanoribbon quantum simulation sub-10 nm phototransistors photosensitivity subthreshold swing GaN HEMTs scaling electron mobility scattering polarization charge 2D materials rhenium selenides ReSe2 field-effect transistor pressure negative photoconductivity n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
Online dostop:	ONIX_20221025_9783036550213_22
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Electronic Nanodevices

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