Silicon Nanodevices

This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and...

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collection Directory of Open Access Books
description This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
format Online
id doab-20.500.12854ir-97408
institution Directory of Open Access Books
language eng
publishDate 2023
publishDateRange 2023
publishDateSort 2023
publisher MDPI - Multidisciplinary Digital Publishing Institute
publisherStr MDPI - Multidisciplinary Digital Publishing Institute
record_format ojs
spelling doab-20.500.12854ir-974082024-04-09T23:16:19Z Silicon Nanodevices Radamson, Henry Wang, Guilei silicon yolk−shell structure anode lithium-ion batteries in-plane nanowire site-controlled epitaxial growth germanium nanowire-based quantum devices HfO2/Si0.7Ge0.3 gate stack ozone oxidation Si-cap interface state density passivation GOI photodetectors dark current responsivity prussian blue nanoparticles organotrialkoxysilane silica beads arsenite arsenate water decontamination vertical gate-all-around (vGAA) digital etch quasi-atomic-layer etching (q-ALE) selective wet etching HNO3 concentration doping effect vertical Gate-all-around (vGAA) p+-Ge0.8Si0.2/Ge stack dual-selective wet etching atomic layer etching (ALE) stacked SiGe/Si epitaxial grown Fin etching FinFET short-term potentiation (STP) long-term potentiation (LTP) charge-trap synaptic transistor band-to-band tunneling pattern recognition neural network neuromorphic system Si-MOS quantum dot spin qubits quantum computing GeSn CVD lasers detectors transistors III-V on Si heteroepitaxy threading dislocation densities (TDDs) anti-phase boundaries (APBs) selective epitaxial growth (SEG) n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students. 2023-02-20T16:43:04Z 2023-02-20T16:43:04Z 2022 book ONIX_20230220_9783036546780_11 9783036546780 9783036546773 https://directory.doabooks.org/handle/20.500.12854/97408 eng image/jpeg Attribution 4.0 International https://mdpi.com/books/pdfview/book/5916 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-0365-4677-3 10.3390/books978-3-0365-4677-3 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783036546780 9783036546773 238 Basel open access
spellingShingle silicon
yolk−shell structure
anode
lithium-ion batteries
in-plane nanowire
site-controlled
epitaxial growth
germanium
nanowire-based quantum devices
HfO2/Si0.7Ge0.3 gate stack
ozone oxidation
Si-cap
interface state density
passivation
GOI
photodetectors
dark current
responsivity
prussian blue nanoparticles
organotrialkoxysilane
silica beads
arsenite
arsenate
water decontamination
vertical gate-all-around (vGAA)
digital etch
quasi-atomic-layer etching (q-ALE)
selective wet etching
HNO3 concentration
doping effect
vertical Gate-all-around (vGAA)
p+-Ge0.8Si0.2/Ge stack
dual-selective wet etching
atomic layer etching (ALE)
stacked SiGe/Si
epitaxial grown
Fin etching
FinFET
short-term potentiation (STP)
long-term potentiation (LTP)
charge-trap synaptic transistor
band-to-band tunneling
pattern recognition
neural network
neuromorphic system
Si-MOS
quantum dot
spin qubits
quantum computing
GeSn
CVD
lasers
detectors
transistors
III-V on Si
heteroepitaxy
threading dislocation densities (TDDs)
anti-phase boundaries (APBs)
selective epitaxial growth (SEG)
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
Silicon Nanodevices
title Silicon Nanodevices
title_full Silicon Nanodevices
title_fullStr Silicon Nanodevices
title_full_unstemmed Silicon Nanodevices
title_short Silicon Nanodevices
title_sort silicon nanodevices
topic silicon
yolk−shell structure
anode
lithium-ion batteries
in-plane nanowire
site-controlled
epitaxial growth
germanium
nanowire-based quantum devices
HfO2/Si0.7Ge0.3 gate stack
ozone oxidation
Si-cap
interface state density
passivation
GOI
photodetectors
dark current
responsivity
prussian blue nanoparticles
organotrialkoxysilane
silica beads
arsenite
arsenate
water decontamination
vertical gate-all-around (vGAA)
digital etch
quasi-atomic-layer etching (q-ALE)
selective wet etching
HNO3 concentration
doping effect
vertical Gate-all-around (vGAA)
p+-Ge0.8Si0.2/Ge stack
dual-selective wet etching
atomic layer etching (ALE)
stacked SiGe/Si
epitaxial grown
Fin etching
FinFET
short-term potentiation (STP)
long-term potentiation (LTP)
charge-trap synaptic transistor
band-to-band tunneling
pattern recognition
neural network
neuromorphic system
Si-MOS
quantum dot
spin qubits
quantum computing
GeSn
CVD
lasers
detectors
transistors
III-V on Si
heteroepitaxy
threading dislocation densities (TDDs)
anti-phase boundaries (APBs)
selective epitaxial growth (SEG)
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
topic_facet silicon
yolk−shell structure
anode
lithium-ion batteries
in-plane nanowire
site-controlled
epitaxial growth
germanium
nanowire-based quantum devices
HfO2/Si0.7Ge0.3 gate stack
ozone oxidation
Si-cap
interface state density
passivation
GOI
photodetectors
dark current
responsivity
prussian blue nanoparticles
organotrialkoxysilane
silica beads
arsenite
arsenate
water decontamination
vertical gate-all-around (vGAA)
digital etch
quasi-atomic-layer etching (q-ALE)
selective wet etching
HNO3 concentration
doping effect
vertical Gate-all-around (vGAA)
p+-Ge0.8Si0.2/Ge stack
dual-selective wet etching
atomic layer etching (ALE)
stacked SiGe/Si
epitaxial grown
Fin etching
FinFET
short-term potentiation (STP)
long-term potentiation (LTP)
charge-trap synaptic transistor
band-to-band tunneling
pattern recognition
neural network
neuromorphic system
Si-MOS
quantum dot
spin qubits
quantum computing
GeSn
CVD
lasers
detectors
transistors
III-V on Si
heteroepitaxy
threading dislocation densities (TDDs)
anti-phase boundaries (APBs)
selective epitaxial growth (SEG)
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
url ONIX_20230220_9783036546780_11