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Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials
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Gelijkaardige items: Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials
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SiC based Miniaturized Devices
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Fundamentals and Recent Advances in Epitaxial Graphene on SiC
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Wide-Bandgap Device Application
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Silicon Carbide
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
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Feature Papers in Electronic Materials Section
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Advanced DC-DC Power Converters and Switching Converters
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Silicon-Based Nanomaterials: Technology and Applications
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Microstructural Design and Processing Control of Advanced Ceramics
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Microstructural Design and Processing Control of Advanced Ceramics
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Miniaturized Transistors, Volume II
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Wide Bandgap Based Devices
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Wide Bandgap Semiconductor Based Micro/Nano Devices
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Micro- and Nanotechnology of Wide Bandgap Semiconductors
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Recent Advances in III-Nitride Semiconductors
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Miniaturized Silicon Photodetectors
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Functional Ceramic Coatings
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Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices
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Advanced Inorganic Semiconductor Materials
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Feature Papers in Compounds
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Energy Efficiency in Electric Motors, Drives, Power Converters and Related Systems
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Nanotechnology for Electronic Materials and Devices
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2D Nanomaterials Processing and Integration in Miniaturized Devices
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Polymer Composites for Electrical and Electronic Engineering Application
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Onderwerp: quantum well
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Onderwerp: transient spectroscopy
Onderwerp: graphene
Onderwerp: epitaxial
Onderwerp: SiC
Onderwerp: terrace-stepped relief
Onderwerp: X-ray scattering
Onderwerp: atomic force microscopy
Onderwerp: HTL layer
Onderwerp: chemical vapor deposition
Onderwerp: hybrid perovskite
Onderwerp: charge trap states
Onderwerp: reliability
Onderwerp: degradation
Onderwerp: SiC MOSFET
Onderwerp: TrenchMOSFET
Onderwerp: repetitive UIS
Onderwerp: radiation compensation
Onderwerp: wide-gap semiconductors
Onderwerp: deep levels
Onderwerp: protons
Onderwerp: electrons
Onderwerp: current-voltage characteristics
Onderwerp: capacitance-voltage characteristics
Onderwerp: ammonothermal
Onderwerp: gallium nitride
Onderwerp: crystal growth
Onderwerp: numerical simulation
Onderwerp: computational fluid dynamics
Onderwerp: natural convection
Onderwerp: buoyancy
Onderwerp: conjugated heat transfer
Onderwerp: solvothermal
Onderwerp: hydrothermal
Onderwerp: nematic liquid crystals
Onderwerp: optical phase grating
Onderwerp: coherent optical processes
Onderwerp: light scattering
Onderwerp: light diffraction
Onderwerp: laser beam intensity control
Onderwerp: sapphire ribbons
Onderwerp: gas voids
Onderwerp: dislocations
Onderwerp: synchrotron radiation imaging
Onderwerp: laser annealing
Onderwerp: silicon
Onderwerp: silicon carbide
Onderwerp: crystallization
Onderwerp: integrated devices
Onderwerp: membrane sensor
Onderwerp: deterministic ion implantation
Onderwerp: counting efficiency
Onderwerp: spatial resolution
Onderwerp: mildly oxidized graphene
Onderwerp: electrochemically exfoliated graphene
Onderwerp: fast joule heating
Onderwerp: activated carbon
Onderwerp: specific surface area
Onderwerp: a-SiC
Onderwerp: amorphous
Onderwerp: PECVD
Onderwerp: biomedical
Onderwerp: passivation
Onderwerp: 3C-SiC
Onderwerp: epitaxy
Onderwerp: compliant substrate
Onderwerp: stacking faults
Onderwerp: conformal epitaxy
Onderwerp: synthesis
Onderwerp: nitrides
Onderwerp: semiconductors
Onderwerp: solubility
Onderwerp: in situ monitoring
Onderwerp: crystal
Onderwerp: high-pressure technology
Onderwerp: supercritical fluid
Onderwerp: GaN
Onderwerp: sol-gel
Onderwerp: TiO2 nanopowder
Onderwerp: thermal treatment
Onderwerp: H2S sensor
Onderwerp: electrical properties
Onderwerp: free charge carriers
Onderwerp: optical Hall effect
Onderwerp: terahertz
Onderwerp: group-III nitrides
Onderwerp: aluminum nitride
Onderwerp: aluminum gallium nitride
Onderwerp: high-electron-mobility transistor
Onderwerp: HEMT
Onderwerp: 4H-SiC
Onderwerp: thermal treatments
Onderwerp: micro-Raman spectroscopy
Onderwerp: graphitization
Onderwerp: exciton recombination
Onderwerp: time-resolved photoluminescence spectroscopy
Onderwerp: thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and i...
Onderwerp: thema EDItEUR::P Mathematics and Science::PG Astronomy, space and time
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Organic Conductors
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Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials
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Onderwerp: electron effective mass
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Toggle additional channel list for Onderwerp: electron effective mass
Onderwerp: transient spectroscopy
Onderwerp: graphene
Onderwerp: epitaxial
Onderwerp: SiC
Onderwerp: terrace-stepped relief
Onderwerp: X-ray scattering
Onderwerp: atomic force microscopy
Onderwerp: HTL layer
Onderwerp: chemical vapor deposition
Onderwerp: hybrid perovskite
Onderwerp: charge trap states
Onderwerp: reliability
Onderwerp: degradation
Onderwerp: SiC MOSFET
Onderwerp: TrenchMOSFET
Onderwerp: repetitive UIS
Onderwerp: radiation compensation
Onderwerp: wide-gap semiconductors
Onderwerp: deep levels
Onderwerp: protons
Onderwerp: electrons
Onderwerp: current-voltage characteristics
Onderwerp: capacitance-voltage characteristics
Onderwerp: ammonothermal
Onderwerp: gallium nitride
Onderwerp: crystal growth
Onderwerp: numerical simulation
Onderwerp: computational fluid dynamics
Onderwerp: natural convection
Onderwerp: buoyancy
Onderwerp: conjugated heat transfer
Onderwerp: solvothermal
Onderwerp: hydrothermal
Onderwerp: nematic liquid crystals
Onderwerp: optical phase grating
Onderwerp: coherent optical processes
Onderwerp: light scattering
Onderwerp: light diffraction
Onderwerp: laser beam intensity control
Onderwerp: sapphire ribbons
Onderwerp: gas voids
Onderwerp: dislocations
Onderwerp: synchrotron radiation imaging
Onderwerp: laser annealing
Onderwerp: silicon
Onderwerp: silicon carbide
Onderwerp: crystallization
Onderwerp: integrated devices
Onderwerp: membrane sensor
Onderwerp: deterministic ion implantation
Onderwerp: counting efficiency
Onderwerp: spatial resolution
Onderwerp: mildly oxidized graphene
Onderwerp: electrochemically exfoliated graphene
Onderwerp: fast joule heating
Onderwerp: activated carbon
Onderwerp: specific surface area
Onderwerp: a-SiC
Onderwerp: amorphous
Onderwerp: PECVD
Onderwerp: biomedical
Onderwerp: passivation
Onderwerp: 3C-SiC
Onderwerp: epitaxy
Onderwerp: compliant substrate
Onderwerp: stacking faults
Onderwerp: conformal epitaxy
Onderwerp: synthesis
Onderwerp: nitrides
Onderwerp: semiconductors
Onderwerp: solubility
Onderwerp: in situ monitoring
Onderwerp: crystal
Onderwerp: high-pressure technology
Onderwerp: supercritical fluid
Onderwerp: GaN
Onderwerp: sol-gel
Onderwerp: TiO2 nanopowder
Onderwerp: thermal treatment
Onderwerp: H2S sensor
Onderwerp: electrical properties
Onderwerp: free charge carriers
Onderwerp: optical Hall effect
Onderwerp: terahertz
Onderwerp: group-III nitrides
Onderwerp: aluminum nitride
Onderwerp: aluminum gallium nitride
Onderwerp: high-electron-mobility transistor
Onderwerp: HEMT
Onderwerp: 4H-SiC
Onderwerp: thermal treatments
Onderwerp: micro-Raman spectroscopy
Onderwerp: graphitization
Onderwerp: exciton recombination
Onderwerp: time-resolved photoluminescence spectroscopy
Onderwerp: thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and i...
Onderwerp: thema EDItEUR::P Mathematics and Science::PG Astronomy, space and time
Channel Options
Toon items als zoekresultaten
Ontdek vergelijkbare kanalen
Quick Look
Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials
Load more items
Bekijk record
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