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Silicon Carbide

The continuous demand for electronic devices operating at increasing current and power levels has driven research into wide-bandgap (WBG) semiconductors in recent decades. In particular, the 4H hexagonal polytype of silicon carbide (4H-SiC) is the most promising for use in power electronic applicati...

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Guardado en:
Formato: Online
Lenguaje:inglés
Publicado: MDPI - Multidisciplinary Digital Publishing Institute 2025
Materias:
SiC power MOSFET
JFET width
JFET doping concentration
gate oxide thickness
orthogonal P+ layout
gate-drain capacitance
high-frequency figure-of-merit (HF-FOM)
cell topology
dodecagonal cell
octagonal cell
gate-to-drain capacitance (Cgd)
specific ON-resistance (Ron,sp)
high-frequency figure of merit (HF-FOM)
switching performance
4H-SiC MOSFET
nitridation
scattering
Hall measurements
body bias
transverse electric field
silicon carbide
integrated photonics
material growth
local oxidation
atomic force microscopy
C-AFM
doping
successive AFM characterizations
doped silicon carbide
MOSFET
high-κ
dielectrics
ALD
WBG
3C-SiC
Schottky contact
p-diode model
non-uniformity
4H-SiC single crystal
physical vapor transport (PVT)
discoloration switching
ToF-SIMS
Raman spectroscopy
thermal gate oxide
SiC
charge-driven breakdown
QBD
CCS
CVS
PVS
electron trapping model
pMOSFET
4H-SiC
HTGB
HTRB
pulsed stress
threshold voltage instability
bilayer graphene
field effect transistors
nanofabrication
Raman spectra analysis
DC and RF characterizations
n/a
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Acceso en línea:ONIX_20250220_9783725822386_177
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ONIX_20250220_9783725822386_177

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