Silicon Carbide
The continuous demand for electronic devices operating at increasing current and power levels has driven research into wide-bandgap (WBG) semiconductors in recent decades. In particular, the 4H hexagonal polytype of silicon carbide (4H-SiC) is the most promising for use in power electronic applicati...
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| Γλώσσα: | Αγγλικά |
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MDPI - Multidisciplinary Digital Publishing Institute
2025
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| Διαθέσιμο Online: | ONIX_20250220_9783725822386_177 |
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| _version_ | 1869518191237005312 |
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| collection | Directory of Open Access Books |
| description | The continuous demand for electronic devices operating at increasing current and power levels has driven research into wide-bandgap (WBG) semiconductors in recent decades. In particular, the 4H hexagonal polytype of silicon carbide (4H-SiC) is the most promising for use in power electronic applications in the medium- to high-voltage range. However, to achieve the optimised performance of these 4H-SiC devices, a full understanding of the fundamental material properties, processing technology, and carrier transport mechanisms is required with wide margins for the progress of the related scientific and technological research into this material. On the one hand, an improvement in the existing power device performances in terms of efficiency and reliability is targeted; on the other hand, the 4H-SiC applications are desirably extendable toward new cutting-edge technologies, e.g., quantum technologies. This Special Issue collated 11 regular and 1 review papers. These papers can be summarized into three parts: the investigation of conventional 4H-SiC devices, the suggestion of new approaches for improved devices, and the use of SiC devices in emerging technology fields. Clearly, due to the broadness of 4H-SiC technology, the present collection cannot include all prominent issues. However, we are confident that fundamental properties and novel approaches have been discussed, hoping that this Special Issue will provide interesting inputs for 4H-SiC-based technology advancement. |
| format | Online |
| id | doab-20.500.12854ir-152813 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2025 |
| publishDateRange | 2025 |
| publishDateSort | 2025 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1528132025-02-20T13:06:50Z Silicon Carbide Vivona, Marilena Jennings, Mike SiC power MOSFET JFET width JFET doping concentration gate oxide thickness orthogonal P+ layout gate-drain capacitance high-frequency figure-of-merit (HF-FOM) cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (Cgd) specific ON-resistance (Ron,sp) high-frequency figure of merit (HF-FOM) switching performance 4H-SiC MOSFET nitridation scattering Hall measurements body bias transverse electric field silicon carbide integrated photonics material growth local oxidation atomic force microscopy C-AFM doping successive AFM characterizations doped silicon carbide MOSFET high-κ dielectrics ALD WBG 3C-SiC Schottky contact p-diode model non-uniformity 4H-SiC single crystal physical vapor transport (PVT) discoloration switching ToF-SIMS Raman spectroscopy thermal gate oxide SiC charge-driven breakdown QBD CCS CVS PVS electron trapping model pMOSFET 4H-SiC HTGB HTRB pulsed stress threshold voltage instability bilayer graphene field effect transistors nanofabrication Raman spectra analysis DC and RF characterizations n/a thema EDItEUR::M Medicine and Nursing::MJ Clinical and internal medicine::MJC Diseases and disorders::MJCL Oncology thema EDItEUR::C Language and Linguistics::CJ Language teaching and learning thema EDItEUR::2 Language qualifiers::2A Indo-European languages::2AC Germanic and Scandinavian languages::2ACB English thema EDItEUR::4 Educational purpose qualifiers::4L For language learning courses and examinations::4LE For ELT / ESL learning, courses, examinations and certificates The continuous demand for electronic devices operating at increasing current and power levels has driven research into wide-bandgap (WBG) semiconductors in recent decades. In particular, the 4H hexagonal polytype of silicon carbide (4H-SiC) is the most promising for use in power electronic applications in the medium- to high-voltage range. However, to achieve the optimised performance of these 4H-SiC devices, a full understanding of the fundamental material properties, processing technology, and carrier transport mechanisms is required with wide margins for the progress of the related scientific and technological research into this material. On the one hand, an improvement in the existing power device performances in terms of efficiency and reliability is targeted; on the other hand, the 4H-SiC applications are desirably extendable toward new cutting-edge technologies, e.g., quantum technologies. This Special Issue collated 11 regular and 1 review papers. These papers can be summarized into three parts: the investigation of conventional 4H-SiC devices, the suggestion of new approaches for improved devices, and the use of SiC devices in emerging technology fields. Clearly, due to the broadness of 4H-SiC technology, the present collection cannot include all prominent issues. However, we are confident that fundamental properties and novel approaches have been discussed, hoping that this Special Issue will provide interesting inputs for 4H-SiC-based technology advancement. 2025-02-20T13:06:46Z 2025-02-20T13:06:46Z 2024 book ONIX_20250220_9783725822386_177 9783725822386 9783725822379 https://directory.doabooks.org/handle/20.500.12854/152813 eng application/octet-stream Attribution 4.0 International https://mdpi.com/books/pdfview/book/10007 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-7258-2237-9 10.3390/books978-3-7258-2237-9 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783725822386 9783725822379 158 Basel open access |
| spellingShingle | SiC power MOSFET JFET width JFET doping concentration gate oxide thickness orthogonal P+ layout gate-drain capacitance high-frequency figure-of-merit (HF-FOM) cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (Cgd) specific ON-resistance (Ron,sp) high-frequency figure of merit (HF-FOM) switching performance 4H-SiC MOSFET nitridation scattering Hall measurements body bias transverse electric field silicon carbide integrated photonics material growth local oxidation atomic force microscopy C-AFM doping successive AFM characterizations doped silicon carbide MOSFET high-κ dielectrics ALD WBG 3C-SiC Schottky contact p-diode model non-uniformity 4H-SiC single crystal physical vapor transport (PVT) discoloration switching ToF-SIMS Raman spectroscopy thermal gate oxide SiC charge-driven breakdown QBD CCS CVS PVS electron trapping model pMOSFET 4H-SiC HTGB HTRB pulsed stress threshold voltage instability bilayer graphene field effect transistors nanofabrication Raman spectra analysis DC and RF characterizations n/a thema EDItEUR::M Medicine and Nursing::MJ Clinical and internal medicine::MJC Diseases and disorders::MJCL Oncology thema EDItEUR::C Language and Linguistics::CJ Language teaching and learning thema EDItEUR::2 Language qualifiers::2A Indo-European languages::2AC Germanic and Scandinavian languages::2ACB English thema EDItEUR::4 Educational purpose qualifiers::4L For language learning courses and examinations::4LE For ELT / ESL learning, courses, examinations and certificates Silicon Carbide |
| title | Silicon Carbide |
| title_full | Silicon Carbide |
| title_fullStr | Silicon Carbide |
| title_full_unstemmed | Silicon Carbide |
| title_short | Silicon Carbide |
| title_sort | silicon carbide |
| topic | SiC power MOSFET JFET width JFET doping concentration gate oxide thickness orthogonal P+ layout gate-drain capacitance high-frequency figure-of-merit (HF-FOM) cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (Cgd) specific ON-resistance (Ron,sp) high-frequency figure of merit (HF-FOM) switching performance 4H-SiC MOSFET nitridation scattering Hall measurements body bias transverse electric field silicon carbide integrated photonics material growth local oxidation atomic force microscopy C-AFM doping successive AFM characterizations doped silicon carbide MOSFET high-κ dielectrics ALD WBG 3C-SiC Schottky contact p-diode model non-uniformity 4H-SiC single crystal physical vapor transport (PVT) discoloration switching ToF-SIMS Raman spectroscopy thermal gate oxide SiC charge-driven breakdown QBD CCS CVS PVS electron trapping model pMOSFET 4H-SiC HTGB HTRB pulsed stress threshold voltage instability bilayer graphene field effect transistors nanofabrication Raman spectra analysis DC and RF characterizations n/a thema EDItEUR::M Medicine and Nursing::MJ Clinical and internal medicine::MJC Diseases and disorders::MJCL Oncology thema EDItEUR::C Language and Linguistics::CJ Language teaching and learning thema EDItEUR::2 Language qualifiers::2A Indo-European languages::2AC Germanic and Scandinavian languages::2ACB English thema EDItEUR::4 Educational purpose qualifiers::4L For language learning courses and examinations::4LE For ELT / ESL learning, courses, examinations and certificates |
| topic_facet | SiC power MOSFET JFET width JFET doping concentration gate oxide thickness orthogonal P+ layout gate-drain capacitance high-frequency figure-of-merit (HF-FOM) cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (Cgd) specific ON-resistance (Ron,sp) high-frequency figure of merit (HF-FOM) switching performance 4H-SiC MOSFET nitridation scattering Hall measurements body bias transverse electric field silicon carbide integrated photonics material growth local oxidation atomic force microscopy C-AFM doping successive AFM characterizations doped silicon carbide MOSFET high-κ dielectrics ALD WBG 3C-SiC Schottky contact p-diode model non-uniformity 4H-SiC single crystal physical vapor transport (PVT) discoloration switching ToF-SIMS Raman spectroscopy thermal gate oxide SiC charge-driven breakdown QBD CCS CVS PVS electron trapping model pMOSFET 4H-SiC HTGB HTRB pulsed stress threshold voltage instability bilayer graphene field effect transistors nanofabrication Raman spectra analysis DC and RF characterizations n/a thema EDItEUR::M Medicine and Nursing::MJ Clinical and internal medicine::MJC Diseases and disorders::MJCL Oncology thema EDItEUR::C Language and Linguistics::CJ Language teaching and learning thema EDItEUR::2 Language qualifiers::2A Indo-European languages::2AC Germanic and Scandinavian languages::2ACB English thema EDItEUR::4 Educational purpose qualifiers::4L For language learning courses and examinations::4LE For ELT / ESL learning, courses, examinations and certificates |
| url | ONIX_20250220_9783725822386_177 |