Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials
This reprint, entitled "Feature Papers in Electronic Materials Section – Volume 2", is a collection of selected papers recently published in the MDPI journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power and high-frequency electronics...
Αποθηκεύτηκε σε:
| Μορφή: | Online |
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| Γλώσσα: | Αγγλικά |
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MDPI - Multidisciplinary Digital Publishing Institute
2025
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| Θέματα: | |
| Διαθέσιμο Online: | ONIX_20250220_9783725827985_437 |
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| _version_ | 1869525273145245696 |
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| collection | Directory of Open Access Books |
| description | This reprint, entitled "Feature Papers in Electronic Materials Section – Volume 2", is a collection of selected papers recently published in the MDPI journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power and high-frequency electronics, optoelectronic devices, sensors, etc.). The first part of the volume is dedicated to the most popular wide-bandgap semiconductors (WBG), i.e., silicon carbide (SiC) and gallium nitride (GaN), focusing on specific materials and device technology issues, as well as new applications. The second part of the reprint is a miscellaneous collection of other electronic materials for various applications, including graphene, and other materials for high-frequency devices, solar cells, and sensors. |
| format | Online |
| id | doab-20.500.12854ir-153073 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2025 |
| publishDateRange | 2025 |
| publishDateSort | 2025 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1530732025-02-20T13:31:05Z Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials Roccaforte, Fabrizio quantum well electron effective mass transient spectroscopy graphene epitaxial SiC terrace-stepped relief X-ray scattering atomic force microscopy HTL layer chemical vapor deposition hybrid perovskite charge trap states reliability degradation SiC MOSFET TrenchMOSFET repetitive UIS radiation compensation wide-gap semiconductors deep levels protons electrons current-voltage characteristics capacitance-voltage characteristics ammonothermal gallium nitride crystal growth numerical simulation computational fluid dynamics natural convection buoyancy conjugated heat transfer solvothermal hydrothermal nematic liquid crystals optical phase grating coherent optical processes light scattering light diffraction laser beam intensity control sapphire ribbons gas voids dislocations synchrotron radiation imaging laser annealing silicon silicon carbide crystallization integrated devices membrane sensor deterministic ion implantation counting efficiency spatial resolution mildly oxidized graphene electrochemically exfoliated graphene fast joule heating activated carbon specific surface area a-SiC amorphous PECVD biomedical passivation 3C-SiC epitaxy compliant substrate stacking faults conformal epitaxy synthesis nitrides semiconductors solubility in situ monitoring crystal high-pressure technology supercritical fluid GaN sol-gel TiO2 nanopowder thermal treatment H2S sensor electrical properties free charge carriers optical Hall effect terahertz group-III nitrides aluminum nitride aluminum gallium nitride high-electron-mobility transistor HEMT 4H-SiC thermal treatments micro-Raman spectroscopy graphitization exciton recombination time-resolved photoluminescence spectroscopy thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PG Astronomy, space and time This reprint, entitled "Feature Papers in Electronic Materials Section – Volume 2", is a collection of selected papers recently published in the MDPI journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power and high-frequency electronics, optoelectronic devices, sensors, etc.). The first part of the volume is dedicated to the most popular wide-bandgap semiconductors (WBG), i.e., silicon carbide (SiC) and gallium nitride (GaN), focusing on specific materials and device technology issues, as well as new applications. The second part of the reprint is a miscellaneous collection of other electronic materials for various applications, including graphene, and other materials for high-frequency devices, solar cells, and sensors. 2025-02-20T13:31:03Z 2025-02-20T13:31:03Z 2024 book ONIX_20250220_9783725827985_437 9783725827985 9783725827978 https://directory.doabooks.org/handle/20.500.12854/153073 eng application/octet-stream Attribution 4.0 International https://mdpi.com/books/pdfview/book/10274 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-7258-2797-8 10.3390/books978-3-7258-2797-8 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783725827985 9783725827978 346 Basel open access |
| spellingShingle | quantum well electron effective mass transient spectroscopy graphene epitaxial SiC terrace-stepped relief X-ray scattering atomic force microscopy HTL layer chemical vapor deposition hybrid perovskite charge trap states reliability degradation SiC MOSFET TrenchMOSFET repetitive UIS radiation compensation wide-gap semiconductors deep levels protons electrons current-voltage characteristics capacitance-voltage characteristics ammonothermal gallium nitride crystal growth numerical simulation computational fluid dynamics natural convection buoyancy conjugated heat transfer solvothermal hydrothermal nematic liquid crystals optical phase grating coherent optical processes light scattering light diffraction laser beam intensity control sapphire ribbons gas voids dislocations synchrotron radiation imaging laser annealing silicon silicon carbide crystallization integrated devices membrane sensor deterministic ion implantation counting efficiency spatial resolution mildly oxidized graphene electrochemically exfoliated graphene fast joule heating activated carbon specific surface area a-SiC amorphous PECVD biomedical passivation 3C-SiC epitaxy compliant substrate stacking faults conformal epitaxy synthesis nitrides semiconductors solubility in situ monitoring crystal high-pressure technology supercritical fluid GaN sol-gel TiO2 nanopowder thermal treatment H2S sensor electrical properties free charge carriers optical Hall effect terahertz group-III nitrides aluminum nitride aluminum gallium nitride high-electron-mobility transistor HEMT 4H-SiC thermal treatments micro-Raman spectroscopy graphitization exciton recombination time-resolved photoluminescence spectroscopy thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PG Astronomy, space and time Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials |
| title | Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials |
| title_full | Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials |
| title_fullStr | Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials |
| title_full_unstemmed | Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials |
| title_short | Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials |
| title_sort | feature papers in electronic materials section volume 2 15th anniversary of materials |
| topic | quantum well electron effective mass transient spectroscopy graphene epitaxial SiC terrace-stepped relief X-ray scattering atomic force microscopy HTL layer chemical vapor deposition hybrid perovskite charge trap states reliability degradation SiC MOSFET TrenchMOSFET repetitive UIS radiation compensation wide-gap semiconductors deep levels protons electrons current-voltage characteristics capacitance-voltage characteristics ammonothermal gallium nitride crystal growth numerical simulation computational fluid dynamics natural convection buoyancy conjugated heat transfer solvothermal hydrothermal nematic liquid crystals optical phase grating coherent optical processes light scattering light diffraction laser beam intensity control sapphire ribbons gas voids dislocations synchrotron radiation imaging laser annealing silicon silicon carbide crystallization integrated devices membrane sensor deterministic ion implantation counting efficiency spatial resolution mildly oxidized graphene electrochemically exfoliated graphene fast joule heating activated carbon specific surface area a-SiC amorphous PECVD biomedical passivation 3C-SiC epitaxy compliant substrate stacking faults conformal epitaxy synthesis nitrides semiconductors solubility in situ monitoring crystal high-pressure technology supercritical fluid GaN sol-gel TiO2 nanopowder thermal treatment H2S sensor electrical properties free charge carriers optical Hall effect terahertz group-III nitrides aluminum nitride aluminum gallium nitride high-electron-mobility transistor HEMT 4H-SiC thermal treatments micro-Raman spectroscopy graphitization exciton recombination time-resolved photoluminescence spectroscopy thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PG Astronomy, space and time |
| topic_facet | quantum well electron effective mass transient spectroscopy graphene epitaxial SiC terrace-stepped relief X-ray scattering atomic force microscopy HTL layer chemical vapor deposition hybrid perovskite charge trap states reliability degradation SiC MOSFET TrenchMOSFET repetitive UIS radiation compensation wide-gap semiconductors deep levels protons electrons current-voltage characteristics capacitance-voltage characteristics ammonothermal gallium nitride crystal growth numerical simulation computational fluid dynamics natural convection buoyancy conjugated heat transfer solvothermal hydrothermal nematic liquid crystals optical phase grating coherent optical processes light scattering light diffraction laser beam intensity control sapphire ribbons gas voids dislocations synchrotron radiation imaging laser annealing silicon silicon carbide crystallization integrated devices membrane sensor deterministic ion implantation counting efficiency spatial resolution mildly oxidized graphene electrochemically exfoliated graphene fast joule heating activated carbon specific surface area a-SiC amorphous PECVD biomedical passivation 3C-SiC epitaxy compliant substrate stacking faults conformal epitaxy synthesis nitrides semiconductors solubility in situ monitoring crystal high-pressure technology supercritical fluid GaN sol-gel TiO2 nanopowder thermal treatment H2S sensor electrical properties free charge carriers optical Hall effect terahertz group-III nitrides aluminum nitride aluminum gallium nitride high-electron-mobility transistor HEMT 4H-SiC thermal treatments micro-Raman spectroscopy graphitization exciton recombination time-resolved photoluminescence spectroscopy thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PG Astronomy, space and time |
| url | ONIX_20250220_9783725827985_437 |