Wide-Bandgap Device Application

(1) As SiC and GaN devices are increasingly being applied in power electronics, the excellent performance of these devices is required. Therefore, how to design the devices, how to drive them, and what other fields these devices can be applied in are attractive research issues.(2) This Special Issue...

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מידע ביבליוגרפי
פורמט:	Online
שפה:	אנגלית
יצא לאור:	MDPI - Multidisciplinary Digital Publishing Institute 2025
נושאים:	high power semiconductor laser constant current driving LCC-type resonant-circuit low ripple laser drive power circuit parallel SiC MOSFETs conduction loss driving loss hierarchical driving SiC power devices magnetic integrated parallel current sharing working mechanism SiC MOSFET gate charge electric field crowding effect switching characteristics GaN HEMT short-circuit protection reliability GaN on engineered poly-AlN substrates QST substrate GaN on Si substrate HEMT high breakdown voltage pulsed power circuit drift step recovery diodes sub-nanosecond GaN vertical device resistance partitioning electromagnetic (EM) simulations gallium nitride (GaN) radio frequency (RF)-integrated circuits spiral inductors 4H-SiC Al implantation defects molecular dynamics (MD) density functional theory (DFT) tight-binding (TB) model quantum transport electronic lighting driver circuit deep ultraviolet LED disinfection and sterilization lamp power factor correction total harmonic distortion SiC MOSFETs series-connected voltage equalization overvoltage pulse power generator (PPG) high voltage nanoseconds electroporation tumor cell ablation silicon carbide metal oxide semiconductor field-effect transistors split gate short-circuit high-frequency figure-of-merit thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities
גישה מקוונת:	ONIX_20250812T095121_9783725832163_81
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!

תיאור
סיכום:	(1) As SiC and GaN devices are increasingly being applied in power electronics, the excellent performance of these devices is required. Therefore, how to design the devices, how to drive them, and what other fields these devices can be applied in are attractive research issues.(2) This Special Issue aims to exhibit the research progress of the application of wide-bandgap semiconductor devices, including the novel structures of devices, new topology of circuits for the high performance of wide-bandgap devices, and integrated circuit application of wide-bandgap semiconductors.(3) In this Special Issue, original research articles and reviews are presented. Research areas are the following: high-efficiency SiC MOSFET-based DC/DC converters for EV applications, high-voltage SiC-based DC/DC converters for HVDC applications, SiC-based AC/DC for EV charging station applications, high-power density power converters based on GaN devices, integrated circuits based on SiC material for harsh environment applications, and integrated circuits based on GaN material for high-frequency applications.

Wide-Bandgap Device Application

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