Wide-Bandgap Device Application
(1) As SiC and GaN devices are increasingly being applied in power electronics, the excellent performance of these devices is required. Therefore, how to design the devices, how to drive them, and what other fields these devices can be applied in are attractive research issues.(2) This Special Issue...
Tallennettuna:
| Aineistotyyppi: | Online |
|---|---|
| Kieli: | englanti |
| Julkaistu: |
MDPI - Multidisciplinary Digital Publishing Institute
2025
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| Aiheet: | |
| Linkit: | ONIX_20250812T095121_9783725832163_81 |
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| _version_ | 1869514628627693568 |
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| collection | Directory of Open Access Books |
| description | (1) As SiC and GaN devices are increasingly being applied in power electronics, the excellent performance of these devices is required. Therefore, how to design the devices, how to drive them, and what other fields these devices can be applied in are attractive research issues.(2) This Special Issue aims to exhibit the research progress of the application of wide-bandgap semiconductor devices, including the novel structures of devices, new topology of circuits for the high performance of wide-bandgap devices, and integrated circuit application of wide-bandgap semiconductors.(3) In this Special Issue, original research articles and reviews are presented. Research areas are the following: high-efficiency SiC MOSFET-based DC/DC converters for EV applications, high-voltage SiC-based DC/DC converters for HVDC applications, SiC-based AC/DC for EV charging station applications, high-power density power converters based on GaN devices, integrated circuits based on SiC material for harsh environment applications, and integrated circuits based on GaN material for high-frequency applications. |
| format | Online |
| id | doab-20.500.12854ir-165132 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2025 |
| publishDateRange | 2025 |
| publishDateSort | 2025 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1651322025-08-12T08:04:37Z Wide-Bandgap Device Application Zhang, Yimeng Sun, Lejia Zhang, Yuming high power semiconductor laser constant current driving LCC-type resonant-circuit low ripple laser drive power circuit parallel SiC MOSFETs conduction loss driving loss hierarchical driving SiC power devices magnetic integrated parallel current sharing working mechanism SiC MOSFET gate charge electric field crowding effect switching characteristics GaN HEMT short-circuit protection reliability GaN on engineered poly-AlN substrates QST substrate GaN on Si substrate HEMT high breakdown voltage pulsed power circuit drift step recovery diodes sub-nanosecond GaN vertical device resistance partitioning electromagnetic (EM) simulations gallium nitride (GaN) radio frequency (RF)-integrated circuits spiral inductors 4H-SiC Al implantation defects molecular dynamics (MD) density functional theory (DFT) tight-binding (TB) model quantum transport electronic lighting driver circuit deep ultraviolet LED disinfection and sterilization lamp power factor correction total harmonic distortion SiC MOSFETs series-connected voltage equalization overvoltage pulse power generator (PPG) high voltage nanoseconds electroporation tumor cell ablation silicon carbide metal oxide semiconductor field-effect transistors split gate short-circuit high-frequency figure-of-merit thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities (1) As SiC and GaN devices are increasingly being applied in power electronics, the excellent performance of these devices is required. Therefore, how to design the devices, how to drive them, and what other fields these devices can be applied in are attractive research issues.(2) This Special Issue aims to exhibit the research progress of the application of wide-bandgap semiconductor devices, including the novel structures of devices, new topology of circuits for the high performance of wide-bandgap devices, and integrated circuit application of wide-bandgap semiconductors.(3) In this Special Issue, original research articles and reviews are presented. Research areas are the following: high-efficiency SiC MOSFET-based DC/DC converters for EV applications, high-voltage SiC-based DC/DC converters for HVDC applications, SiC-based AC/DC for EV charging station applications, high-power density power converters based on GaN devices, integrated circuits based on SiC material for harsh environment applications, and integrated circuits based on GaN material for high-frequency applications. 2025-08-12T08:04:35Z 2025-08-12T08:04:35Z 2025 book ONIX_20250812T095121_9783725832163_81 9783725832163 9783725832156 https://directory.doabooks.org/handle/20.500.12854/165132 eng image/jpeg Attribution 4.0 International https://mdpi.com/books https://mdpi.com/books/pdfview/book/10528 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-7258-3215-6 10.3390/books978-3-7258-3215-6 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783725832163 9783725832156 206 open access |
| spellingShingle | high power semiconductor laser constant current driving LCC-type resonant-circuit low ripple laser drive power circuit parallel SiC MOSFETs conduction loss driving loss hierarchical driving SiC power devices magnetic integrated parallel current sharing working mechanism SiC MOSFET gate charge electric field crowding effect switching characteristics GaN HEMT short-circuit protection reliability GaN on engineered poly-AlN substrates QST substrate GaN on Si substrate HEMT high breakdown voltage pulsed power circuit drift step recovery diodes sub-nanosecond GaN vertical device resistance partitioning electromagnetic (EM) simulations gallium nitride (GaN) radio frequency (RF)-integrated circuits spiral inductors 4H-SiC Al implantation defects molecular dynamics (MD) density functional theory (DFT) tight-binding (TB) model quantum transport electronic lighting driver circuit deep ultraviolet LED disinfection and sterilization lamp power factor correction total harmonic distortion SiC MOSFETs series-connected voltage equalization overvoltage pulse power generator (PPG) high voltage nanoseconds electroporation tumor cell ablation silicon carbide metal oxide semiconductor field-effect transistors split gate short-circuit high-frequency figure-of-merit thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities Wide-Bandgap Device Application |
| title | Wide-Bandgap Device Application |
| title_full | Wide-Bandgap Device Application |
| title_fullStr | Wide-Bandgap Device Application |
| title_full_unstemmed | Wide-Bandgap Device Application |
| title_short | Wide-Bandgap Device Application |
| title_sort | wide bandgap device application |
| topic | high power semiconductor laser constant current driving LCC-type resonant-circuit low ripple laser drive power circuit parallel SiC MOSFETs conduction loss driving loss hierarchical driving SiC power devices magnetic integrated parallel current sharing working mechanism SiC MOSFET gate charge electric field crowding effect switching characteristics GaN HEMT short-circuit protection reliability GaN on engineered poly-AlN substrates QST substrate GaN on Si substrate HEMT high breakdown voltage pulsed power circuit drift step recovery diodes sub-nanosecond GaN vertical device resistance partitioning electromagnetic (EM) simulations gallium nitride (GaN) radio frequency (RF)-integrated circuits spiral inductors 4H-SiC Al implantation defects molecular dynamics (MD) density functional theory (DFT) tight-binding (TB) model quantum transport electronic lighting driver circuit deep ultraviolet LED disinfection and sterilization lamp power factor correction total harmonic distortion SiC MOSFETs series-connected voltage equalization overvoltage pulse power generator (PPG) high voltage nanoseconds electroporation tumor cell ablation silicon carbide metal oxide semiconductor field-effect transistors split gate short-circuit high-frequency figure-of-merit thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities |
| topic_facet | high power semiconductor laser constant current driving LCC-type resonant-circuit low ripple laser drive power circuit parallel SiC MOSFETs conduction loss driving loss hierarchical driving SiC power devices magnetic integrated parallel current sharing working mechanism SiC MOSFET gate charge electric field crowding effect switching characteristics GaN HEMT short-circuit protection reliability GaN on engineered poly-AlN substrates QST substrate GaN on Si substrate HEMT high breakdown voltage pulsed power circuit drift step recovery diodes sub-nanosecond GaN vertical device resistance partitioning electromagnetic (EM) simulations gallium nitride (GaN) radio frequency (RF)-integrated circuits spiral inductors 4H-SiC Al implantation defects molecular dynamics (MD) density functional theory (DFT) tight-binding (TB) model quantum transport electronic lighting driver circuit deep ultraviolet LED disinfection and sterilization lamp power factor correction total harmonic distortion SiC MOSFETs series-connected voltage equalization overvoltage pulse power generator (PPG) high voltage nanoseconds electroporation tumor cell ablation silicon carbide metal oxide semiconductor field-effect transistors split gate short-circuit high-frequency figure-of-merit thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities |
| url | ONIX_20250812T095121_9783725832163_81 |