Memory Nanomaterials
This Special Issue is designed to guide readers through the forefront of 21st-century storage technologies. Beginning with the physical limits of traditional semiconductor technology, we concentrate on breakthrough principles, novel materials, and innovative structures—encompassing silicon heterostr...
में बचाया:
| स्वरूप: | Online |
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| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
MDPI - Multidisciplinary Digital Publishing Institute
2025
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| विषय: | |
| ऑनलाइन पहुंच: | ONIX_20250812T110751_9783725842858_413 |
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| _version_ | 1869514437865504768 |
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| collection | Directory of Open Access Books |
| description | This Special Issue is designed to guide readers through the forefront of 21st-century storage technologies. Beginning with the physical limits of traditional semiconductor technology, we concentrate on breakthrough principles, novel materials, and innovative structures—encompassing silicon heterostructures and nanostructures, advances in nanostructure processing and integration for DRAM, as well as emerging DRAM architectures. At the same time, the materials and device mechanisms of a variety of next-generation memories—including resistive RAM (RRAM), phase-change memory (PCM), magnetoresistive RAM (MRAM) and ferroelectric RAM (FRAM)—are explored. Topics such as reliability analysis and nanostructure characterization, materials computation and device simulation, logic-memory 3D integration, and innovative memory applications present studies from material growth and device fabrication to performance evaluation. We have invited leading experts in the field to share their insights and latest findings, collectively charting a blueprint for high-performance, energy-efficient, and highly scalable memory technologies that will drive the information age toward smarter, greener, and more efficient storage solutions. |
| format | Online |
| id | doab-20.500.12854ir-165658 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2025 |
| publishDateRange | 2025 |
| publishDateSort | 2025 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1656582025-08-12T10:04:25Z Memory Nanomaterials Zhao, Chao Wang, Guilei Li, Huihui 3D sequential integration low thermal budget Schottky S/D FinFETs inverter phase change memory phase change material high speed thermal stability spin wave transistor spin wave filter voltage modulated resistive random-access memory (RRAM) sol-gel strontium zirconate titanium spin-transfer torque easy-cone magnetization precession switching current overdrive write error rate reliability hot carrier degradation (HCD) Si p-FinFETs gate-induced drain leakage (GIDL) recovery oxide trap generation energy distribution ferroelectrics ZrO2–HfO2 interlayer laminated structure endurance oxygen vacancy vertical channel transistor self-aligned laser annealing recrystallization Si cap vertical nanosheet ferroelectric domain size GAA selective etch silicon germanium etch effect process simulation thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general This Special Issue is designed to guide readers through the forefront of 21st-century storage technologies. Beginning with the physical limits of traditional semiconductor technology, we concentrate on breakthrough principles, novel materials, and innovative structures—encompassing silicon heterostructures and nanostructures, advances in nanostructure processing and integration for DRAM, as well as emerging DRAM architectures. At the same time, the materials and device mechanisms of a variety of next-generation memories—including resistive RAM (RRAM), phase-change memory (PCM), magnetoresistive RAM (MRAM) and ferroelectric RAM (FRAM)—are explored. Topics such as reliability analysis and nanostructure characterization, materials computation and device simulation, logic-memory 3D integration, and innovative memory applications present studies from material growth and device fabrication to performance evaluation. We have invited leading experts in the field to share their insights and latest findings, collectively charting a blueprint for high-performance, energy-efficient, and highly scalable memory technologies that will drive the information age toward smarter, greener, and more efficient storage solutions. 2025-08-12T10:04:23Z 2025-08-12T10:04:23Z 2025 book ONIX_20250812T110751_9783725842858_413 9783725842858 9783725842865 https://directory.doabooks.org/handle/20.500.12854/165658 eng image/jpeg Attribution 4.0 International https://mdpi.com/books https://mdpi.com/books/pdfview/book/11091 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-7258-4286-5 10.3390/books978-3-7258-4286-5 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783725842858 9783725842865 124 open access |
| spellingShingle | 3D sequential integration low thermal budget Schottky S/D FinFETs inverter phase change memory phase change material high speed thermal stability spin wave transistor spin wave filter voltage modulated resistive random-access memory (RRAM) sol-gel strontium zirconate titanium spin-transfer torque easy-cone magnetization precession switching current overdrive write error rate reliability hot carrier degradation (HCD) Si p-FinFETs gate-induced drain leakage (GIDL) recovery oxide trap generation energy distribution ferroelectrics ZrO2–HfO2 interlayer laminated structure endurance oxygen vacancy vertical channel transistor self-aligned laser annealing recrystallization Si cap vertical nanosheet ferroelectric domain size GAA selective etch silicon germanium etch effect process simulation thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general Memory Nanomaterials |
| title | Memory Nanomaterials |
| title_full | Memory Nanomaterials |
| title_fullStr | Memory Nanomaterials |
| title_full_unstemmed | Memory Nanomaterials |
| title_short | Memory Nanomaterials |
| title_sort | memory nanomaterials |
| topic | 3D sequential integration low thermal budget Schottky S/D FinFETs inverter phase change memory phase change material high speed thermal stability spin wave transistor spin wave filter voltage modulated resistive random-access memory (RRAM) sol-gel strontium zirconate titanium spin-transfer torque easy-cone magnetization precession switching current overdrive write error rate reliability hot carrier degradation (HCD) Si p-FinFETs gate-induced drain leakage (GIDL) recovery oxide trap generation energy distribution ferroelectrics ZrO2–HfO2 interlayer laminated structure endurance oxygen vacancy vertical channel transistor self-aligned laser annealing recrystallization Si cap vertical nanosheet ferroelectric domain size GAA selective etch silicon germanium etch effect process simulation thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general |
| topic_facet | 3D sequential integration low thermal budget Schottky S/D FinFETs inverter phase change memory phase change material high speed thermal stability spin wave transistor spin wave filter voltage modulated resistive random-access memory (RRAM) sol-gel strontium zirconate titanium spin-transfer torque easy-cone magnetization precession switching current overdrive write error rate reliability hot carrier degradation (HCD) Si p-FinFETs gate-induced drain leakage (GIDL) recovery oxide trap generation energy distribution ferroelectrics ZrO2–HfO2 interlayer laminated structure endurance oxygen vacancy vertical channel transistor self-aligned laser annealing recrystallization Si cap vertical nanosheet ferroelectric domain size GAA selective etch silicon germanium etch effect process simulation thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general |
| url | ONIX_20250812T110751_9783725842858_413 |