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Memory Nanomaterials

This Special Issue is designed to guide readers through the forefront of 21st-century storage technologies. Beginning with the physical limits of traditional semiconductor technology, we concentrate on breakthrough principles, novel materials, and innovative structures—encompassing silicon heterostr...

Täydet tiedot

Tallennettuna:
Aineistotyyppi: Online
Kieli:englanti
Julkaistu: MDPI - Multidisciplinary Digital Publishing Institute 2025
Aiheet:
3D sequential integration
low thermal budget
Schottky S/D FinFETs
inverter
phase change memory
phase change material
high speed
thermal stability
spin wave transistor
spin wave filter
voltage modulated
resistive random-access memory (RRAM)
sol-gel
strontium zirconate titanium
spin-transfer torque
easy-cone magnetization
precession switching
current overdrive
write error rate
reliability
hot carrier degradation (HCD)
Si p-FinFETs
gate-induced drain leakage (GIDL)
recovery
oxide trap generation
energy distribution
ferroelectrics
ZrO2–HfO2
interlayer
laminated structure
endurance
oxygen vacancy
vertical channel transistor
self-aligned
laser annealing
recrystallization
Si cap
vertical nanosheet
ferroelectric
domain size
GAA
selective etch
silicon germanium
etch effect
process simulation
thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general
Linkit:ONIX_20250812T110751_9783725842858_413
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