Radiation Effects of Advanced Electronic Devices and Circuits
Responding to the critical demands for radiation-hardened space electronics, this Reprint synthesizes cutting-edge advances in radiation effects research across advanced semiconductor technologies. It addresses dual industry challenges posed by escalating radiation susceptibility from device scaling...
Wedi'i Gadw mewn:
| Fformat: | Online |
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| Iaith: | Saesneg |
| Cyhoeddwyd: |
MDPI - Multidisciplinary Digital Publishing Institute
2026
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| Pynciau: | |
| Mynediad Ar-lein: | https://directory.doabooks.org/handle/20.500.12854/170629 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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| _version_ | 1869527324810018816 |
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| collection | Directory of Open Access Books |
| description | Responding to the critical demands for radiation-hardened space electronics, this Reprint synthesizes cutting-edge advances in radiation effects research across advanced semiconductor technologies. It addresses dual industry challenges posed by escalating radiation susceptibility from device scaling and the urgent need for new evaluation paradigms in radiation hardness assurance for complex electronic systems. The Reprint features pioneering research on CNN accelerators for aerospace computing, gallium nitride (GaN) High Electron Mobility Transistors (HEMTs), high-barrier beta-gallium oxide (β-Ga₂O₃) Schottky Barrier Diodes (SBDs), silicon MOSFETs, and indium phosphide Heterojunction Bipolar Transistors (InP HBTs), collectively advancing radiation hardening methodologies and reliability assessment. By presenting novel hardening strategies with breakthrough radiation mitigation solutions, it delivers essential insights for navigating evolving challenges while positioning itself as a vital resource for advancing radiation tolerance electronics innovation. |
| format | Online |
| id | doab-20.500.12854ir-170629 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2026 |
| publishDateRange | 2026 |
| publishDateSort | 2026 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1706292026-01-02T16:18:31Z Radiation Effects of Advanced Electronic Devices and Circuits Cai, Chang Chi, Yaqing Cai, Li SPADs proton irradiation gamma irradiation I–V characteristics reliability SEU CNN weight solar cell laser silicon radiation electrical parameters hetero-junction bipolar transistor degradation mechanism model simulation irradiation defects neutron temperature SRAM bipolar amplification critical charge β-Ga2O3 Schottky barrier diode (SBD) temperature dependence gamma-ray irradiation interface defects total ionizing dose (TID) magnetic sheets near-field magnetic shielding effectiveness (NSE) equivalent magnetic circuit shielding effectiveness metallic enclosure absorber aperture electromagnetic compatibility IGBT thyristor diode atmospheric neutron single-event burnout failure rate magnetic ferrite sheet magnetic shielding effectiveness relative permeability regression model mean square error β-Ga2O3 SBD X-ray irradiation neutron irradiation defects total irradiation dose hot-carrier injection lifetime Cascode GaN HEMT heavy ion irradiation displacement damage single event burnout n/a Responding to the critical demands for radiation-hardened space electronics, this Reprint synthesizes cutting-edge advances in radiation effects research across advanced semiconductor technologies. It addresses dual industry challenges posed by escalating radiation susceptibility from device scaling and the urgent need for new evaluation paradigms in radiation hardness assurance for complex electronic systems. The Reprint features pioneering research on CNN accelerators for aerospace computing, gallium nitride (GaN) High Electron Mobility Transistors (HEMTs), high-barrier beta-gallium oxide (β-Ga₂O₃) Schottky Barrier Diodes (SBDs), silicon MOSFETs, and indium phosphide Heterojunction Bipolar Transistors (InP HBTs), collectively advancing radiation hardening methodologies and reliability assessment. By presenting novel hardening strategies with breakthrough radiation mitigation solutions, it delivers essential insights for navigating evolving challenges while positioning itself as a vital resource for advancing radiation tolerance electronics innovation. 2026-01-02T16:18:28Z 2026-01-02T16:18:28Z 2025 book 978-3-7258-4833-1 https://directory.doabooks.org/handle/20.500.12854/170629 eng application/octet-stream Attribution 4.0 International https://mdpi.com/books https://mdpi.com/books/pdfview/book/11357 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-7258-4834-8 10.3390/books978-3-7258-4834-8 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 978-3-7258-4833-1 186 CH open access |
| spellingShingle | SPADs proton irradiation gamma irradiation I–V characteristics reliability SEU CNN weight solar cell laser silicon radiation electrical parameters hetero-junction bipolar transistor degradation mechanism model simulation irradiation defects neutron temperature SRAM bipolar amplification critical charge β-Ga2O3 Schottky barrier diode (SBD) temperature dependence gamma-ray irradiation interface defects total ionizing dose (TID) magnetic sheets near-field magnetic shielding effectiveness (NSE) equivalent magnetic circuit shielding effectiveness metallic enclosure absorber aperture electromagnetic compatibility IGBT thyristor diode atmospheric neutron single-event burnout failure rate magnetic ferrite sheet magnetic shielding effectiveness relative permeability regression model mean square error β-Ga2O3 SBD X-ray irradiation neutron irradiation defects total irradiation dose hot-carrier injection lifetime Cascode GaN HEMT heavy ion irradiation displacement damage single event burnout n/a Radiation Effects of Advanced Electronic Devices and Circuits |
| title | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_full | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_fullStr | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_full_unstemmed | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_short | Radiation Effects of Advanced Electronic Devices and Circuits |
| title_sort | radiation effects of advanced electronic devices and circuits |
| topic | SPADs proton irradiation gamma irradiation I–V characteristics reliability SEU CNN weight solar cell laser silicon radiation electrical parameters hetero-junction bipolar transistor degradation mechanism model simulation irradiation defects neutron temperature SRAM bipolar amplification critical charge β-Ga2O3 Schottky barrier diode (SBD) temperature dependence gamma-ray irradiation interface defects total ionizing dose (TID) magnetic sheets near-field magnetic shielding effectiveness (NSE) equivalent magnetic circuit shielding effectiveness metallic enclosure absorber aperture electromagnetic compatibility IGBT thyristor diode atmospheric neutron single-event burnout failure rate magnetic ferrite sheet magnetic shielding effectiveness relative permeability regression model mean square error β-Ga2O3 SBD X-ray irradiation neutron irradiation defects total irradiation dose hot-carrier injection lifetime Cascode GaN HEMT heavy ion irradiation displacement damage single event burnout n/a |
| topic_facet | SPADs proton irradiation gamma irradiation I–V characteristics reliability SEU CNN weight solar cell laser silicon radiation electrical parameters hetero-junction bipolar transistor degradation mechanism model simulation irradiation defects neutron temperature SRAM bipolar amplification critical charge β-Ga2O3 Schottky barrier diode (SBD) temperature dependence gamma-ray irradiation interface defects total ionizing dose (TID) magnetic sheets near-field magnetic shielding effectiveness (NSE) equivalent magnetic circuit shielding effectiveness metallic enclosure absorber aperture electromagnetic compatibility IGBT thyristor diode atmospheric neutron single-event burnout failure rate magnetic ferrite sheet magnetic shielding effectiveness relative permeability regression model mean square error β-Ga2O3 SBD X-ray irradiation neutron irradiation defects total irradiation dose hot-carrier injection lifetime Cascode GaN HEMT heavy ion irradiation displacement damage single event burnout n/a |
| url | https://directory.doabooks.org/handle/20.500.12854/170629 |