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Radiation Effects of Advanced Electronic Devices and Circuits

Responding to the critical demands for radiation-hardened space electronics, this Reprint synthesizes cutting-edge advances in radiation effects research across advanced semiconductor technologies. It addresses dual industry challenges posed by escalating radiation susceptibility from device scaling...

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Formato: Online
Idioma:inglês
Publicado em: MDPI - Multidisciplinary Digital Publishing Institute 2026
Assuntos:
SPADs
proton irradiation
gamma irradiation
I–V characteristics
reliability
SEU
CNN
weight
solar cell
laser
silicon
radiation
electrical parameters
hetero-junction bipolar transistor
degradation mechanism
model simulation
irradiation defects
neutron
temperature
SRAM
bipolar amplification
critical charge
β-Ga2O3 Schottky barrier diode (SBD)
temperature dependence
gamma-ray irradiation
interface defects
total ionizing dose (TID)
magnetic sheets
near-field magnetic shielding effectiveness (NSE)
equivalent magnetic circuit
shielding effectiveness
metallic enclosure
absorber
aperture
electromagnetic compatibility
IGBT
thyristor
diode
atmospheric neutron
single-event burnout
failure rate
magnetic ferrite sheet
magnetic shielding effectiveness
relative permeability
regression model
mean square error
β-Ga2O3 SBD
X-ray irradiation
neutron irradiation
defects
total irradiation dose
hot-carrier injection
lifetime
Cascode GaN HEMT
heavy ion irradiation
displacement damage
single event burnout
n/a
Acesso em linha:https://directory.doabooks.org/handle/20.500.12854/170629
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