Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich

The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative couple...

Cur síos iomlán

Sábháilte in:
Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Diebold, Sebastian
Formáid: Online
Teanga:Gearmáinis
Foilsithe / Cruthaithe: KIT Scientific Publishing 2021
Ábhair:
Rochtain ar líne:34538
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