Wide Bandgap Semiconductor Based Micro/Nano Devices
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key...
में बचाया:
| मुख्य लेखक: | |
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| स्वरूप: | Online |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
MDPI - Multidisciplinary Digital Publishing Institute
2021
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| विषय: | |
| ऑनलाइन पहुंच: | 35950 |
| टैग: |
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
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| _version_ | 1869530232371806208 |
|---|---|
| author | Seo, Jung-Hun |
| author_browse | Seo, Jung-Hun |
| author_facet | Seo, Jung-Hun |
| author_sort | Seo, Jung-Hun |
| collection | Directory of Open Access Books |
| description | While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices. |
| format | Online |
| id | doab-20.500.12854ir-62681 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2021 |
| publishDateRange | 2021 |
| publishDateSort | 2021 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-626812024-04-11T15:10:36Z Wide Bandgap Semiconductor Based Micro/Nano Devices Seo, Jung-Hun TA1-2040 TK1-9971 T1-995 ohmic contact n/a MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I–V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices. 2021-02-12T08:35:26Z 2021-02-12T08:35:26Z 2019-08-28 11:21:27 2019 book 35950 9783038978435 9783038978428 https://directory.doabooks.org/handle/20.500.12854/62681 eng image/jpeg Attribution-NonCommercial-NoDerivatives 4.0 International https://mdpi.com/books/pdfview/book/1265 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-03897-843-5 10.3390/books978-3-03897-843-5 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783038978435 9783038978428 138 open access |
| spellingShingle | TA1-2040 TK1-9971 T1-995 ohmic contact n/a MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I–V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology Seo, Jung-Hun Wide Bandgap Semiconductor Based Micro/Nano Devices |
| title | Wide Bandgap Semiconductor Based Micro/Nano Devices |
| title_full | Wide Bandgap Semiconductor Based Micro/Nano Devices |
| title_fullStr | Wide Bandgap Semiconductor Based Micro/Nano Devices |
| title_full_unstemmed | Wide Bandgap Semiconductor Based Micro/Nano Devices |
| title_short | Wide Bandgap Semiconductor Based Micro/Nano Devices |
| title_sort | wide bandgap semiconductor based micro nano devices |
| topic | TA1-2040 TK1-9971 T1-995 ohmic contact n/a MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I–V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology |
| topic_facet | TA1-2040 TK1-9971 T1-995 ohmic contact n/a MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I–V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology |
| url | 35950 |
| work_keys_str_mv | AT seojunghun widebandgapsemiconductorbasedmicronanodevices |