Physics and Technology of Silicon Carbide Devices
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for materia...
Uloženo v:
| Médium: | Online |
|---|---|
| Jazyk: | angličtina |
| Vydáno: |
IntechOpen
2021
|
| Témata: | |
| On-line přístup: | ONIX_20210420_9789535109174_1703 |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|