Physics and Technology of Silicon Carbide Devices

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for materia...

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語言:英语
出版: IntechOpen 2021
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collection Directory of Open Access Books
description Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
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institution Directory of Open Access Books
language eng
publishDate 2021
publishDateRange 2021
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publisher IntechOpen
publisherStr IntechOpen
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spelling doab-20.500.12854ir-663452024-04-05T12:40:58Z Physics and Technology of Silicon Carbide Devices Hijikata, Yasuto Solid state chemistry thema EDItEUR::P Mathematics and Science::PN Chemistry::PNF Analytical chemistry::PNFS Spectrum analysis, spectrochemistry, mass spectrometry Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness. 2021-04-20T15:40:43Z 2021-04-20T15:40:43Z 2012 book ONIX_20210420_9789535109174_1703 9789535109174 9789535162834 https://directory.doabooks.org/handle/20.500.12854/66345 eng image/jpeg n/a https://www.intechopen.com/books https://mts.intechopen.com/storage/books/3129/authors_book/authors_book.pdf IntechOpen IntechOpen 10.5772/3428 10.5772/3428 78a36484-2c0c-47cb-ad67-2b9f5cd4a8f6 9789535109174 9789535162834 IntechOpen 414 open access
spellingShingle Solid state chemistry
thema EDItEUR::P Mathematics and Science::PN Chemistry::PNF Analytical chemistry::PNFS Spectrum analysis, spectrochemistry, mass spectrometry
Physics and Technology of Silicon Carbide Devices
title Physics and Technology of Silicon Carbide Devices
title_full Physics and Technology of Silicon Carbide Devices
title_fullStr Physics and Technology of Silicon Carbide Devices
title_full_unstemmed Physics and Technology of Silicon Carbide Devices
title_short Physics and Technology of Silicon Carbide Devices
title_sort physics and technology of silicon carbide devices
topic Solid state chemistry
thema EDItEUR::P Mathematics and Science::PN Chemistry::PNF Analytical chemistry::PNFS Spectrum analysis, spectrochemistry, mass spectrometry
topic_facet Solid state chemistry
thema EDItEUR::P Mathematics and Science::PN Chemistry::PNF Analytical chemistry::PNFS Spectrum analysis, spectrochemistry, mass spectrometry
url ONIX_20210420_9789535109174_1703