SiC based Miniaturized Devices

MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for i...

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Bibliographische Detailangaben
Format:	Online
Sprache:	Englisch
Veröffentlicht:	MDPI - Multidisciplinary Digital Publishing Institute 2021
Schlagworte:	high-power impulse magnetron sputtering (HiPIMS) silicon carbide aluminum nitride thin film Rutherford backscattering spectrometry (RBS) grazing incidence X-ray diffraction (GIXRD) Raman spectroscopy 6H-SiC indentation deformation material removal mechanisms critical load 4H-SiC critical depth of cut Berkovich indenter cleavage strength nanoscratching power electronics high-temperature converters MEMS devices SiC power electronic devices neural interface neural probe neural implant microelectrode array MEA SiC 3C-SiC doped SiC n-type p-type amorphous SiC epitaxial growth electrochemical characterization MESFET simulation PAE bulk micromachining electrochemical etching circular membrane bulge test vibrometry mechanical properties Young’s modulus residual stress FEM semiconductor radiation detector microstrip detector power module negative gate-source voltage spike 4H-SiC, epitaxial layer Schottky barrier radiation detector point defects deep level transient spectroscopy (DLTS) thermally stimulated current spectroscopy (TSC) electron beam induced current spectroscopy (EBIC) pulse height spectroscopy (PHS) n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
Online-Zugang:	ONIX_20210501_9783039360109_392
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SiC based Miniaturized Devices

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