Chapter Spatial Atomic Layer Deposition

In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a substrate through short pulses while kept physically separated by intermediate purge steps. Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept a...

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主要な著者:	Jiménez, Carmen, Bellet, Daniel, Masse de la Huerta, César, Muñoz-Rojas, David, Huong Nguyen, Viet
フォーマット:	Online
言語:	英語
出版事項:	InTechOpen 2021
主題:	chemical vapor deposition, spatial atomic layer deposition (SALD), atmospheric pressure, in-line processing, thin films, transparent conductive materials, fluid dynamics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science
オンライン･アクセス:	ONIX_20210602_10.5772/intechopen.82439_415
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