Chapter Spatial Atomic Layer Deposition
In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a substrate through short pulses while kept physically separated by intermediate purge steps. Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept a...
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2021
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| Online-Zugang: | ONIX_20210602_10.5772/intechopen.82439_415 |
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| author | Jiménez, Carmen Bellet, Daniel Masse de la Huerta, César Muñoz-Rojas, David Huong Nguyen, Viet |
| author_browse | Bellet, Daniel Huong Nguyen, Viet Jiménez, Carmen Masse de la Huerta, César Muñoz-Rojas, David |
| author_facet | Jiménez, Carmen Bellet, Daniel Masse de la Huerta, César Muñoz-Rojas, David Huong Nguyen, Viet |
| author_sort | Jiménez, Carmen |
| collection | Directory of Open Access Books |
| description | In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a substrate through short pulses while kept physically separated by intermediate purge steps. Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept apart by an inert gas region or zone. Film growth is achieved by exposing the substrate to the locations containing the different precursors. Because the purge step is eliminated, the process becomes faster, being indeed compatible with fast-throughput techniques such as roll-to-roll (R2R), and much more versatile and easier and cheap to scale up. In addition, one of the main assets of SALD is that it can be performed at ambient pressure and even in the open air (i.e., without using any deposition chamber at all), while not compromising the deposition rate. In the present chapter, the fundamentals of SALD and its historical development are presented. Then, a succinct description of the different engineering approaches to SALD developed to date is provided. This is followed by the description of the particular fluid dynamics aspects and the engineering challenges associated with SALD. Finally, some of the applications in which the unique assets of SALD can be exploited are described. |
| format | Online |
| id | doab-20.500.12854ir-70416 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2021 |
| publishDateRange | 2021 |
| publishDateSort | 2021 |
| publisher | InTechOpen |
| publisherStr | InTechOpen |
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| spelling | doab-20.500.12854ir-704162025-01-21T23:31:33Z Chapter Spatial Atomic Layer Deposition Jiménez, Carmen Bellet, Daniel Masse de la Huerta, César Muñoz-Rojas, David Huong Nguyen, Viet chemical vapor deposition, spatial atomic layer deposition (SALD), atmospheric pressure, in-line processing, thin films, transparent conductive materials, fluid dynamics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a substrate through short pulses while kept physically separated by intermediate purge steps. Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept apart by an inert gas region or zone. Film growth is achieved by exposing the substrate to the locations containing the different precursors. Because the purge step is eliminated, the process becomes faster, being indeed compatible with fast-throughput techniques such as roll-to-roll (R2R), and much more versatile and easier and cheap to scale up. In addition, one of the main assets of SALD is that it can be performed at ambient pressure and even in the open air (i.e., without using any deposition chamber at all), while not compromising the deposition rate. In the present chapter, the fundamentals of SALD and its historical development are presented. Then, a succinct description of the different engineering approaches to SALD developed to date is provided. This is followed by the description of the particular fluid dynamics aspects and the engineering challenges associated with SALD. Finally, some of the applications in which the unique assets of SALD can be exploited are described. 2021-02-10T12:58:18Z 2021-06-02T10:11:43Z 2019 chapter ONIX_20210602_10.5772/intechopen.82439_415 https://library.oapen.org/handle/20.500.12657/49301 https://directory.doabooks.org/handle/20.500.12854/70416 eng open access image/jpeg image/jpeg image/jpeg n/a n/a n/a https://library.oapen.org/bitstream/20.500.12657/49301/1/64743.pdf https://library.oapen.org/bitstream/20.500.12657/49301/1/64743.pdf https://library.oapen.org/bitstream/20.500.12657/49301/1/64743.pdf InTechOpen 10.5772/intechopen.82439 10.5772/intechopen.82439 035ecc65-6737-43cf-a13a-6bdf67ce01f4 open access |
| spellingShingle | chemical vapor deposition, spatial atomic layer deposition (SALD), atmospheric pressure, in-line processing, thin films, transparent conductive materials, fluid dynamics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science Jiménez, Carmen Bellet, Daniel Masse de la Huerta, César Muñoz-Rojas, David Huong Nguyen, Viet Chapter Spatial Atomic Layer Deposition |
| title | Chapter Spatial Atomic Layer Deposition |
| title_full | Chapter Spatial Atomic Layer Deposition |
| title_fullStr | Chapter Spatial Atomic Layer Deposition |
| title_full_unstemmed | Chapter Spatial Atomic Layer Deposition |
| title_short | Chapter Spatial Atomic Layer Deposition |
| title_sort | chapter spatial atomic layer deposition |
| topic | chemical vapor deposition, spatial atomic layer deposition (SALD), atmospheric pressure, in-line processing, thin films, transparent conductive materials, fluid dynamics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science |
| topic_facet | chemical vapor deposition, spatial atomic layer deposition (SALD), atmospheric pressure, in-line processing, thin films, transparent conductive materials, fluid dynamics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science |
| url | ONIX_20210602_10.5772/intechopen.82439_415 |
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