Radiation Tolerant Electronics, Volume II
Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation har...
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| Materialtyp: | Online |
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| Språk: | engelska |
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MDPI - Multidisciplinary Digital Publishing Institute
2023
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| Länkar: | ONIX_20230202_9783036564456_86 |
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| _version_ | 1869514080376586240 |
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| collection | Directory of Open Access Books |
| description | Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects. |
| format | Online |
| id | doab-20.500.12854ir-96685 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2023 |
| publishDateRange | 2023 |
| publishDateSort | 2023 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-966852024-04-11T15:10:36Z Radiation Tolerant Electronics, Volume II Leroux, Paul triple modular redundancy 65 nm CMOS technology single event effects radiation hardening by design digital integrated circuits fault injection simulation VHDL open source tools triple modular redundancy TMR time redundancy (TR) TMR/Simplex reliability improvement factor (RIF) half-duty limited DC-DC converter total ionizing dose system-level testing point-of-load converter radiation hardness assurance system qualification All-Digital PLL CDR Single-Event Effects radiation hardening system-level tests D Flip-Flop heavy ion radiation hardened Single Event Upset D-type flip-flop single event transient single event upset quadrature super-harmonic LC-tank Q-phase VCO QVCO radiation TID SEE X-ray high energy physics radiation hardened by design 22-nm FD SOI 28-nm FD SOI Co-60 flip-flop (FF) radiation effects ring oscillator (RO) static random-access memory (SRAM) total ionizing dose (TID) radiation effect radiation test method sensitive area parasitic bipolar amplification processor laser test generalized linear model ensemble method confidence interval double-node upset (DNU) radiation-hardened latch radiation hardening by design (RHBD) single event upset polarity single-node upset (SNU) soft error n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects. 2023-02-02T16:37:08Z 2023-02-02T16:37:08Z 2023 book ONIX_20230202_9783036564456_86 9783036564456 9783036564449 https://directory.doabooks.org/handle/20.500.12854/96685 eng image/jpeg Attribution 4.0 International https://mdpi.com/books/pdfview/book/6630 https://mdpi.com/books/pdfview/book/6630 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-0365-6444-9 10.3390/books978-3-0365-6444-9 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783036564456 9783036564449 182 Basel open access |
| spellingShingle | triple modular redundancy 65 nm CMOS technology single event effects radiation hardening by design digital integrated circuits fault injection simulation VHDL open source tools triple modular redundancy TMR time redundancy (TR) TMR/Simplex reliability improvement factor (RIF) half-duty limited DC-DC converter total ionizing dose system-level testing point-of-load converter radiation hardness assurance system qualification All-Digital PLL CDR Single-Event Effects radiation hardening system-level tests D Flip-Flop heavy ion radiation hardened Single Event Upset D-type flip-flop single event transient single event upset quadrature super-harmonic LC-tank Q-phase VCO QVCO radiation TID SEE X-ray high energy physics radiation hardened by design 22-nm FD SOI 28-nm FD SOI Co-60 flip-flop (FF) radiation effects ring oscillator (RO) static random-access memory (SRAM) total ionizing dose (TID) radiation effect radiation test method sensitive area parasitic bipolar amplification processor laser test generalized linear model ensemble method confidence interval double-node upset (DNU) radiation-hardened latch radiation hardening by design (RHBD) single event upset polarity single-node upset (SNU) soft error n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities Radiation Tolerant Electronics, Volume II |
| title | Radiation Tolerant Electronics, Volume II |
| title_full | Radiation Tolerant Electronics, Volume II |
| title_fullStr | Radiation Tolerant Electronics, Volume II |
| title_full_unstemmed | Radiation Tolerant Electronics, Volume II |
| title_short | Radiation Tolerant Electronics, Volume II |
| title_sort | radiation tolerant electronics volume ii |
| topic | triple modular redundancy 65 nm CMOS technology single event effects radiation hardening by design digital integrated circuits fault injection simulation VHDL open source tools triple modular redundancy TMR time redundancy (TR) TMR/Simplex reliability improvement factor (RIF) half-duty limited DC-DC converter total ionizing dose system-level testing point-of-load converter radiation hardness assurance system qualification All-Digital PLL CDR Single-Event Effects radiation hardening system-level tests D Flip-Flop heavy ion radiation hardened Single Event Upset D-type flip-flop single event transient single event upset quadrature super-harmonic LC-tank Q-phase VCO QVCO radiation TID SEE X-ray high energy physics radiation hardened by design 22-nm FD SOI 28-nm FD SOI Co-60 flip-flop (FF) radiation effects ring oscillator (RO) static random-access memory (SRAM) total ionizing dose (TID) radiation effect radiation test method sensitive area parasitic bipolar amplification processor laser test generalized linear model ensemble method confidence interval double-node upset (DNU) radiation-hardened latch radiation hardening by design (RHBD) single event upset polarity single-node upset (SNU) soft error n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities |
| topic_facet | triple modular redundancy 65 nm CMOS technology single event effects radiation hardening by design digital integrated circuits fault injection simulation VHDL open source tools triple modular redundancy TMR time redundancy (TR) TMR/Simplex reliability improvement factor (RIF) half-duty limited DC-DC converter total ionizing dose system-level testing point-of-load converter radiation hardness assurance system qualification All-Digital PLL CDR Single-Event Effects radiation hardening system-level tests D Flip-Flop heavy ion radiation hardened Single Event Upset D-type flip-flop single event transient single event upset quadrature super-harmonic LC-tank Q-phase VCO QVCO radiation TID SEE X-ray high energy physics radiation hardened by design 22-nm FD SOI 28-nm FD SOI Co-60 flip-flop (FF) radiation effects ring oscillator (RO) static random-access memory (SRAM) total ionizing dose (TID) radiation effect radiation test method sensitive area parasitic bipolar amplification processor laser test generalized linear model ensemble method confidence interval double-node upset (DNU) radiation-hardened latch radiation hardening by design (RHBD) single event upset polarity single-node upset (SNU) soft error n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities |
| url | ONIX_20230202_9783036564456_86 |