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Recent Advances in III-Nitride Semiconductors

Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on “Recen...

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I tiakina i:
Hōputu: Online
Reo:Ingarihi
I whakaputaina: MDPI - Multidisciplinary Digital Publishing Institute 2023
Ngā marau:
Nitrides
GaN
AlGaN
InGaN
heterostructures
epitaxy
electro-optics devices
micro-electronics devices
power devices
tunable devices
photonic crystal enhanced light-matter interaction
photonic crystal and plasmonics
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
Urunga tuihono:ONIX_20230911_9783036586243_86
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Whakarāpopototanga:Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on “Recent Advances in III-Nitride Semiconductors” provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures; GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics.

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