Recent Advances in III-Nitride Semiconductors
Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on “Recen...
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| Format: | Online |
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| Idioma: | anglès |
| Publicat: |
MDPI - Multidisciplinary Digital Publishing Institute
2023
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| Accés en línia: | ONIX_20230911_9783036586243_86 |
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| _version_ | 1869522554210746368 |
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| collection | Directory of Open Access Books |
| description | Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on “Recent Advances in III-Nitride Semiconductors” provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures; GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics. |
| format | Online |
| id | doab-20.500.12854ir-113953 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2023 |
| publishDateRange | 2023 |
| publishDateSort | 2023 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1139532024-04-09T23:16:08Z Recent Advances in III-Nitride Semiconductors Chen, Peng Chen, Zhizhong Nitrides GaN AlGaN InGaN heterostructures epitaxy electro-optics devices micro-electronics devices power devices tunable devices photonic crystal enhanced light-matter interaction photonic crystal and plasmonics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on “Recent Advances in III-Nitride Semiconductors” provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures; GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics. 2023-09-11T12:09:48Z 2023-09-11T12:09:48Z 2023 book ONIX_20230911_9783036586243_86 9783036586243 9783036586250 https://directory.doabooks.org/handle/20.500.12854/113953 eng application/octet-stream Attribution 4.0 International https://mdpi.com/books/pdfview/book/7797 https://mdpi.com/books/pdfview/book/7797 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-0365-8625-0 10.3390/books978-3-0365-8625-0 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783036586243 9783036586250 236 open access |
| spellingShingle | Nitrides GaN AlGaN InGaN heterostructures epitaxy electro-optics devices micro-electronics devices power devices tunable devices photonic crystal enhanced light-matter interaction photonic crystal and plasmonics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology Recent Advances in III-Nitride Semiconductors |
| title | Recent Advances in III-Nitride Semiconductors |
| title_full | Recent Advances in III-Nitride Semiconductors |
| title_fullStr | Recent Advances in III-Nitride Semiconductors |
| title_full_unstemmed | Recent Advances in III-Nitride Semiconductors |
| title_short | Recent Advances in III-Nitride Semiconductors |
| title_sort | recent advances in iii nitride semiconductors |
| topic | Nitrides GaN AlGaN InGaN heterostructures epitaxy electro-optics devices micro-electronics devices power devices tunable devices photonic crystal enhanced light-matter interaction photonic crystal and plasmonics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology |
| topic_facet | Nitrides GaN AlGaN InGaN heterostructures epitaxy electro-optics devices micro-electronics devices power devices tunable devices photonic crystal enhanced light-matter interaction photonic crystal and plasmonics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology |
| url | ONIX_20230911_9783036586243_86 |