Imagen de Portada

Strain-Engineered MOSFETs

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...

Descripción completa

Guardado en:
Autores principales: Maiti, C.K., Maiti, T.K.
Formato: Online
Lenguaje:inglés
Publicado: Taylor & Francis 2025
Materias:
Strained Si
Substrate-Induced Strain Engineering in CMOS Technology
Gate Length
Process-Induced Stress Engineering in CMOS Technology
Power Consumption
Electronic Properties of Strain-Engineered Semiconductors
SCE
Strain-Engineered MOSFETs
Contact Etch Stop Layers
Noise in Strain-Engineered Devices
Mobility Enhancement
Biaxial Tensile Strain
Threshold Voltage
PTM
BTIs
NBTI
Metal Oxide Semiconductor Field Effect Transistor
Shallow Trench Isolation
HCI
Random Dopant Fluctuations
SiGe Layer
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFN Microwave technology
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering
Acceso en línea:ONIX_20250512_9781466503472_87
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Sumario:Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Ejemplares similares