Strain-Engineered MOSFETs
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...
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| Định dạng: | Online |
| Ngôn ngữ: | Tiếng Anh |
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Taylor & Francis
2025
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| Truy cập trực tuyến: | ONIX_20250512_9781466503472_87 |
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| _version_ | 1869519717697323008 |
|---|---|
| author | Maiti, C.K. Maiti, T.K. |
| author_browse | Maiti, C.K. Maiti, T.K. |
| author_facet | Maiti, C.K. Maiti, T.K. |
| author_sort | Maiti, C.K. |
| collection | Directory of Open Access Books |
| description | Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs. |
| format | Online |
| id | doab-20.500.12854ir-159256 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2025 |
| publishDateRange | 2025 |
| publishDateSort | 2025 |
| publisher | Taylor & Francis |
| publisherStr | Taylor & Francis |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1592562025-07-29T14:27:17Z Strain-Engineered MOSFETs Maiti, C.K. Maiti, T.K. Strained Si Substrate-Induced Strain Engineering in CMOS Technology Gate Length Process-Induced Stress Engineering in CMOS Technology Power Consumption Electronic Properties of Strain-Engineered Semiconductors SCE Strain-Engineered MOSFETs Contact Etch Stop Layers Noise in Strain-Engineered Devices Mobility Enhancement Biaxial Tensile Strain Threshold Voltage PTM BTIs NBTI Metal Oxide Semiconductor Field Effect Transistor Shallow Trench Isolation HCI Random Dopant Fluctuations SiGe Layer thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFN Microwave technology thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs. 2025-05-13T04:11:45Z 2025-05-13T04:11:45Z 2025-05-12T09:38:45Z 2018 book ONIX_20250512_9781466503472_87 https://library.oapen.org/handle/20.500.12657/101554 9781466503472 9781138075603 9781315216577 9781466500556 9781351832465 https://directory.doabooks.org/handle/20.500.12854/159256 eng open access image/jpeg image/jpeg Attribution-NonCommercial-NoDerivatives 4.0 International Attribution-NonCommercial-NoDerivatives 4.0 International https://library.oapen.org/bitstream/20.500.12657/101554/1/9781466503472.pdf https://library.oapen.org/bitstream/20.500.12657/101554/1/9781466503472.pdf Taylor & Francis CRC Press 10.1201/9781315216577 10.1201/9781315216577 fa69b019-f4ee-4979-8d42-c6b6c476b5f0 Knowledge Unlatched b818ba9d-2dd9-4fd7-a364-7f305aef7ee9 9781466503472 9781138075603 9781315216577 9781466500556 9781351832465 Knowledge Unlatched (KU) KU Select 2018: STEM Backlist Books CRC Press 320 [...] open access |
| spellingShingle | Strained Si Substrate-Induced Strain Engineering in CMOS Technology Gate Length Process-Induced Stress Engineering in CMOS Technology Power Consumption Electronic Properties of Strain-Engineered Semiconductors SCE Strain-Engineered MOSFETs Contact Etch Stop Layers Noise in Strain-Engineered Devices Mobility Enhancement Biaxial Tensile Strain Threshold Voltage PTM BTIs NBTI Metal Oxide Semiconductor Field Effect Transistor Shallow Trench Isolation HCI Random Dopant Fluctuations SiGe Layer thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFN Microwave technology thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering Maiti, C.K. Maiti, T.K. Strain-Engineered MOSFETs |
| title | Strain-Engineered MOSFETs |
| title_full | Strain-Engineered MOSFETs |
| title_fullStr | Strain-Engineered MOSFETs |
| title_full_unstemmed | Strain-Engineered MOSFETs |
| title_short | Strain-Engineered MOSFETs |
| title_sort | strain engineered mosfets |
| topic | Strained Si Substrate-Induced Strain Engineering in CMOS Technology Gate Length Process-Induced Stress Engineering in CMOS Technology Power Consumption Electronic Properties of Strain-Engineered Semiconductors SCE Strain-Engineered MOSFETs Contact Etch Stop Layers Noise in Strain-Engineered Devices Mobility Enhancement Biaxial Tensile Strain Threshold Voltage PTM BTIs NBTI Metal Oxide Semiconductor Field Effect Transistor Shallow Trench Isolation HCI Random Dopant Fluctuations SiGe Layer thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFN Microwave technology thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering |
| topic_facet | Strained Si Substrate-Induced Strain Engineering in CMOS Technology Gate Length Process-Induced Stress Engineering in CMOS Technology Power Consumption Electronic Properties of Strain-Engineered Semiconductors SCE Strain-Engineered MOSFETs Contact Etch Stop Layers Noise in Strain-Engineered Devices Mobility Enhancement Biaxial Tensile Strain Threshold Voltage PTM BTIs NBTI Metal Oxide Semiconductor Field Effect Transistor Shallow Trench Isolation HCI Random Dopant Fluctuations SiGe Layer thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFN Microwave technology thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering |
| url | ONIX_20250512_9781466503472_87 |
| work_keys_str_mv | AT maitick strainengineeredmosfets AT maititk strainengineeredmosfets |