Strain-Engineered MOSFETs

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...

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Detaylı Bibliyografya
Asıl Yazarlar:	Maiti, C.K., Maiti, T.K.
Materyal Türü:	Online
Dil:	İngilizce
Baskı/Yayın Bilgisi:	Taylor & Francis 2025
Konular:	Strained Si Substrate-Induced Strain Engineering in CMOS Technology Gate Length Process-Induced Stress Engineering in CMOS Technology Power Consumption Electronic Properties of Strain-Engineered Semiconductors SCE Strain-Engineered MOSFETs Contact Etch Stop Layers Noise in Strain-Engineered Devices Mobility Enhancement Biaxial Tensile Strain Threshold Voltage PTM BTIs NBTI Metal Oxide Semiconductor Field Effect Transistor Shallow Trench Isolation HCI Random Dopant Fluctuations SiGe Layer thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFN Microwave technology thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering
Online Erişim:	ONIX_20250512_9781466503472_87
Etiketler:	Etiketle Etiket eklenmemiş, İlk siz ekleyin!

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Strain-Engineered MOSFETs

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