Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors
This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...
Furkejuvvon:
| Váldodahkki: | |
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| Materiálatiipa: | Online |
| Giella: | eaŋgalasgiella |
| Almmustuhtton: |
KIT Scientific Publishing
2021
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| Fáttát: | |
| Liŋkkat: | 35598 |
| Fáddágilkorat: |
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| Čoahkkáigeassu: | This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. |
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