Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors
This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...
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| Format: | Online |
| Jezik: | angleščina |
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KIT Scientific Publishing
2021
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| Online dostop: | 35598 |
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| _version_ | 1869529844332625920 |
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| author | Schneider, Karl |
| author_browse | Schneider, Karl |
| author_facet | Schneider, Karl |
| author_sort | Schneider, Karl |
| collection | Directory of Open Access Books |
| description | This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. |
| format | Online |
| id | doab-20.500.12854ir-42490 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2021 |
| publishDateRange | 2021 |
| publishDateSort | 2021 |
| publisher | KIT Scientific Publishing |
| publisherStr | KIT Scientific Publishing |
| record_format | ojs |
| spelling | doab-20.500.12854ir-424902024-04-09T23:15:47Z Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors Schneider, Karl T1-995 bipolar transistor amplifier transistor optimization transistor model distributed amplifier hetojunction bipolar transistor thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. 2021-02-11T09:20:39Z 2021-02-11T09:20:39Z 2019-07-30 20:02:02 2006 book 35598 3866440219 https://directory.doabooks.org/handle/20.500.12854/42490 eng image/jpeg Attribution-NonCommercial-NoDerivatives 4.0 International https://www.ksp.kit.edu/3866440219 KIT Scientific Publishing 10.5445/KSP/1000004373 10.5445/KSP/1000004373 68fffc18-8f7b-44fa-ac7e-0b7d7d979bd2 3866440219 VI, 132 p. open access |
| spellingShingle | T1-995 bipolar transistor amplifier transistor optimization transistor model distributed amplifier hetojunction bipolar transistor thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues Schneider, Karl Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
| title | Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
| title_full | Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
| title_fullStr | Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
| title_full_unstemmed | Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
| title_short | Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
| title_sort | broadband amplifiers for high data rates using inp ingaas double heterojunction bipolar transistors |
| topic | T1-995 bipolar transistor amplifier transistor optimization transistor model distributed amplifier hetojunction bipolar transistor thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues |
| topic_facet | T1-995 bipolar transistor amplifier transistor optimization transistor model distributed amplifier hetojunction bipolar transistor thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues |
| url | 35598 |
| work_keys_str_mv | AT schneiderkarl broadbandamplifiersforhighdataratesusinginpingaasdoubleheterojunctionbipolartransistors |