Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors

This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...

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Autor principal:	Schneider, Karl
Format:	Online
Idioma:	anglès
Publicat:	KIT Scientific Publishing 2021
Matèries:	T1-995 bipolar transistor amplifier transistor optimization transistor model distributed amplifier hetojunction bipolar transistor thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
Accés en línia:	35598
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