Fundamentals and Recent Advances in Epitaxial Graphene on SiC
This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matte...
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| Format: | Online |
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| Jezik: | engleski |
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MDPI - Multidisciplinary Digital Publishing Institute
2022
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| Teme: | |
| Online pristup: | ONIX_20220111_9783036511795_84 |
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| _version_ | 1869518592948568064 |
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| collection | Directory of Open Access Books |
| description | This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications. |
| format | Online |
| id | doab-20.500.12854ir-76348 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2022 |
| publishDateRange | 2022 |
| publishDateSort | 2022 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-763482024-04-09T23:16:32Z Fundamentals and Recent Advances in Epitaxial Graphene on SiC Yakimova, Rositsa Shtepliuk, Ivan epitaxial graphene copper redox reaction electrodeposition voltammetry chronoamperometry DFT silicon carbide Raman spectroscopy 2D peak line shape G peak charge density strain atomic layer deposition high-k insulators ion implantation Raman AFM XPS graphene SiC 3C-SiC on Si substrate interaction carrier concentration mobility intercalation buffer layer surface functionalization twistronics twisted bilayer graphene flat band epitaxial graphene on SiC quasi-free-standing graphene monolayer graphene high-temperature sublimation terahertz optical Hall effect free charge carrier properties sublimation electronic properties material engineering deposition thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications. 2022-01-11T13:29:28Z 2022-01-11T13:29:28Z 2021 book ONIX_20220111_9783036511795_84 9783036511795 9783036511788 https://directory.doabooks.org/handle/20.500.12854/76348 eng image/jpeg Attribution 4.0 International https://mdpi.com/books/pdfview/book/3773 https://mdpi.com/books/pdfview/book/3773 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-0365-1178-8 10.3390/books978-3-0365-1178-8 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783036511795 9783036511788 94 Basel, Switzerland open access |
| spellingShingle | epitaxial graphene copper redox reaction electrodeposition voltammetry chronoamperometry DFT silicon carbide Raman spectroscopy 2D peak line shape G peak charge density strain atomic layer deposition high-k insulators ion implantation Raman AFM XPS graphene SiC 3C-SiC on Si substrate interaction carrier concentration mobility intercalation buffer layer surface functionalization twistronics twisted bilayer graphene flat band epitaxial graphene on SiC quasi-free-standing graphene monolayer graphene high-temperature sublimation terahertz optical Hall effect free charge carrier properties sublimation electronic properties material engineering deposition thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
| title | Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
| title_full | Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
| title_fullStr | Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
| title_full_unstemmed | Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
| title_short | Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
| title_sort | fundamentals and recent advances in epitaxial graphene on sic |
| topic | epitaxial graphene copper redox reaction electrodeposition voltammetry chronoamperometry DFT silicon carbide Raman spectroscopy 2D peak line shape G peak charge density strain atomic layer deposition high-k insulators ion implantation Raman AFM XPS graphene SiC 3C-SiC on Si substrate interaction carrier concentration mobility intercalation buffer layer surface functionalization twistronics twisted bilayer graphene flat band epitaxial graphene on SiC quasi-free-standing graphene monolayer graphene high-temperature sublimation terahertz optical Hall effect free charge carrier properties sublimation electronic properties material engineering deposition thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues |
| topic_facet | epitaxial graphene copper redox reaction electrodeposition voltammetry chronoamperometry DFT silicon carbide Raman spectroscopy 2D peak line shape G peak charge density strain atomic layer deposition high-k insulators ion implantation Raman AFM XPS graphene SiC 3C-SiC on Si substrate interaction carrier concentration mobility intercalation buffer layer surface functionalization twistronics twisted bilayer graphene flat band epitaxial graphene on SiC quasi-free-standing graphene monolayer graphene high-temperature sublimation terahertz optical Hall effect free charge carrier properties sublimation electronic properties material engineering deposition thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues |
| url | ONIX_20220111_9783036511795_84 |