Fundamentals and Recent Advances in Epitaxial Graphene on SiC

This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matte...

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Bibliografiske detaljer
Format:	Online
Sprog:	engelsk
Udgivet:	MDPI - Multidisciplinary Digital Publishing Institute 2022
Fag:	epitaxial graphene copper redox reaction electrodeposition voltammetry chronoamperometry DFT silicon carbide Raman spectroscopy 2D peak line shape G peak charge density strain atomic layer deposition high-k insulators ion implantation Raman AFM XPS graphene SiC 3C-SiC on Si substrate interaction carrier concentration mobility intercalation buffer layer surface functionalization twistronics twisted bilayer graphene flat band epitaxial graphene on SiC quasi-free-standing graphene monolayer graphene high-temperature sublimation terahertz optical Hall effect free charge carrier properties sublimation electronic properties material engineering deposition thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
Online adgang:	ONIX_20220111_9783036511795_84
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Fundamentals and Recent Advances in Epitaxial Graphene on SiC

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