Nanoparticle Engineering for Chemical-Mechanical Planarization
In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progres...
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| Format: | Online |
| Language: | English |
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Taylor & Francis
2025
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| Online Access: | ONIX_20250512_9781000023220_84 |
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| _version_ | 1869520107738234880 |
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| author | Paik, Ungyu Park, Jea-Gun |
| author_browse | Paik, Ungyu Park, Jea-Gun |
| author_facet | Paik, Ungyu Park, Jea-Gun |
| author_sort | Paik, Ungyu |
| collection | Directory of Open Access Books |
| description | In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices. Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology. Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems. |
| format | Online |
| id | doab-20.500.12854ir-159306 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2025 |
| publishDateRange | 2025 |
| publishDateSort | 2025 |
| publisher | Taylor & Francis |
| publisherStr | Taylor & Francis |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1593062025-07-29T18:26:29Z Nanoparticle Engineering for Chemical-Mechanical Planarization Paik, Ungyu Park, Jea-Gun CMP Process PAA Concentration PAA Layer Polishing Rate PVP Polymer Removal Rate Film Thickness Variation PVP PAA Solution NAND Flash Memory PAA Chain Electrokinetic Behavior Pattern Density Oxide Film Ceria Particles Poly Si Film Pram pH Iep Nitride Film Poly Si Removal Depth Higher Removal Rate Contact Angle Abrasive Particles Nano Fumed Silica Particle thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TD Industrial chemistry and manufacturing technologies::TDC Industrial chemistry and chemical engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering thema EDItEUR::P Mathematics and Science In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices. Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology. Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems. 2025-05-13T04:31:21Z 2025-05-13T04:31:21Z 2025-05-12T09:38:22Z 2019 book ONIX_20250512_9781000023220_84 https://library.oapen.org/handle/20.500.12657/101551 9781000023220 9781000006544 9780367446062 9781000023299 9780429291890 9781000023367 9781420059113 9781000019889 9781000013368 https://directory.doabooks.org/handle/20.500.12854/159306 eng open access image/jpeg image/jpeg Attribution-NonCommercial-NoDerivatives 4.0 International Attribution-NonCommercial-NoDerivatives 4.0 International https://library.oapen.org/bitstream/20.500.12657/101551/1/9781000023220.pdf https://library.oapen.org/bitstream/20.500.12657/101551/1/9781000023220.pdf Taylor & Francis CRC Press 10.1201/9780429291890 10.1201/9780429291890 fa69b019-f4ee-4979-8d42-c6b6c476b5f0 Knowledge Unlatched b818ba9d-2dd9-4fd7-a364-7f305aef7ee9 9781000023220 9781000006544 9780367446062 9781000023299 9780429291890 9781000023367 9781420059113 9781000019889 9781000013368 Knowledge Unlatched (KU) KU Select 2018: STEM Backlist Books CRC Press 224 [...] open access |
| spellingShingle | CMP Process PAA Concentration PAA Layer Polishing Rate PVP Polymer Removal Rate Film Thickness Variation PVP PAA Solution NAND Flash Memory PAA Chain Electrokinetic Behavior Pattern Density Oxide Film Ceria Particles Poly Si Film Pram pH Iep Nitride Film Poly Si Removal Depth Higher Removal Rate Contact Angle Abrasive Particles Nano Fumed Silica Particle thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TD Industrial chemistry and manufacturing technologies::TDC Industrial chemistry and chemical engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering thema EDItEUR::P Mathematics and Science Paik, Ungyu Park, Jea-Gun Nanoparticle Engineering for Chemical-Mechanical Planarization |
| title | Nanoparticle Engineering for Chemical-Mechanical Planarization |
| title_full | Nanoparticle Engineering for Chemical-Mechanical Planarization |
| title_fullStr | Nanoparticle Engineering for Chemical-Mechanical Planarization |
| title_full_unstemmed | Nanoparticle Engineering for Chemical-Mechanical Planarization |
| title_short | Nanoparticle Engineering for Chemical-Mechanical Planarization |
| title_sort | nanoparticle engineering for chemical mechanical planarization |
| topic | CMP Process PAA Concentration PAA Layer Polishing Rate PVP Polymer Removal Rate Film Thickness Variation PVP PAA Solution NAND Flash Memory PAA Chain Electrokinetic Behavior Pattern Density Oxide Film Ceria Particles Poly Si Film Pram pH Iep Nitride Film Poly Si Removal Depth Higher Removal Rate Contact Angle Abrasive Particles Nano Fumed Silica Particle thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TD Industrial chemistry and manufacturing technologies::TDC Industrial chemistry and chemical engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering thema EDItEUR::P Mathematics and Science |
| topic_facet | CMP Process PAA Concentration PAA Layer Polishing Rate PVP Polymer Removal Rate Film Thickness Variation PVP PAA Solution NAND Flash Memory PAA Chain Electrokinetic Behavior Pattern Density Oxide Film Ceria Particles Poly Si Film Pram pH Iep Nitride Film Poly Si Removal Depth Higher Removal Rate Contact Angle Abrasive Particles Nano Fumed Silica Particle thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TD Industrial chemistry and manufacturing technologies::TDC Industrial chemistry and chemical engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering thema EDItEUR::P Mathematics and Science |
| url | ONIX_20250512_9781000023220_84 |
| work_keys_str_mv | AT paikungyu nanoparticleengineeringforchemicalmechanicalplanarization AT parkjeagun nanoparticleengineeringforchemicalmechanicalplanarization |