صورة الغلاف

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...

وصف كامل

محفوظ في:
المؤلف الرئيسي: Kühn, Jutta
التنسيق: Online
اللغة:الإنجليزية
منشور في: KIT Scientific Publishing 2021
الموضوعات:
T1-995
MMIC design
power amplifier
AlGaN/GaN HEMT
X-band
power-added efficiency
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
الوصول للمادة أونلاين:35656
الوسوم: إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
الملخص:This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

مواد مشابهة