AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...

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Autor principal:	Kühn, Jutta
Format:	Online
Idioma:	anglès
Publicat:	KIT Scientific Publishing 2021
Matèries:	T1-995 MMIC design power amplifier AlGaN/GaN HEMT X-band power-added efficiency thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
Accés en línia:	35656
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